Eudyna GaN-HEMT 90W
Preliminary
FEATURES
・High
Voltage Operation : V
DS
=50V
・High
Gain: 15dB(typ.) at P
out
=42dBm(Avg.)
・High
Efficiency: 35%(typ.) at P
out
=42dBm(Avg.)
・Broad
Frequency Range : 2100 to 2200MHz
・Proven
Reliability
EGN21A090IV
High Voltage - High Power GaN-HEMT
DESCRIPTION
The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency,
high gain, ease of matching, greater consistency and broad bandwidth
for high power L-band amplifiers with 50V operation. This device is
targeted for high voltage, low current operation in digitally modulated
base station applications - ideally suited for W-CDMA base station
amplifiers and other HPA designs while offering ease of use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GS
P
t
T
stg
T
ch
Condition
T
c
=25
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
3rd Order Inter modulation Distortion
Power Gain
Drain Efficiency
Thermal Resistance
V
p
V
GDO
IM
3
G
p
η
d
R
th
V
DS
=50V I
DS
=36mA
I
GS
= -18 mA
V
DS
=50V
I
DS(DC)
=500mA
P
out
=42dBm(Avg.)
Note 1
Channel to Case
r
P
Symbol
V
DS
I
GF
I
GR
T
ch
im
l
e
Condition
R
G
=5
Ω
R
G
=5
Ω
a
n
i
Rating
Limit
50
<19.4
>-7.2
200
120
-5
160
-65 to +175
250
y
r
Unit
V
V
W
o
C
o
C
Unit
V
mA
mA
o
C
Limit
Min. Typ. Max.
-1.0
-
-
14.0
-
-
-2.0
-350
-32
15.0
35
1.2
-3.5
-
-
-
-
1.4
Unit
V
V
dBc
dB
%
o
C/W
Note 1 : IM3 and Gain test condition as follows:
IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured
over 3.84MHz at fo-10MHz and fI+10MHz.
Edition 1.0
May 2005
1
EGN21A090IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
V
DS
=50V, I
DS
=500mA
50
48
Output Power [dBm]
Output Power [dBm]
46
44
42
40
38
36
2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24
Frequency [GHz]
Pin=22dBm
Pin=28dBm
Pin=34dBm
Pin=24dBm
Pin=30dBm
Pin=36dBm
Output Power and Drain Efficiency vs. Input Power
V
DS
=50V, I
DS
=500mA, f=2.14GHz
52
50
48
46
44
42
40
38
36
34
32
Output
Power
100
90
Drain Efficiency [%]
80
70
60
2-tone IMD vs. Output Power
V
DS
=50V, f
1
=2.135GHz, f
2
=2.145GHz, 10MHz Spacing
-20
-25
-30
IM3 [dBc]
-35
-40
-45
-50
26 28 30 32 34 36 38 40 42 44 46 48
Output Power(average) [dBm]
250mA
500mA
750mA
1000mA
r
P
im
l
e
Pin=26dBm
Pin=32dBm
IMD [dBc]
a
n
i
-20
-25
-30
-35
-40
-45
-50
-55
0.1
y
r
50
Drain
Effi.
40
30
20
10
0
16 18 20 22 24 26 28 30 32 34 36 38 40
Input Power [dBm]
2-tone IMD vs. Tone Spacing, V
DS
=50V, I
DS
=500mA
P
out
=42dBm(average) Center Frequency=2.14GHz
IM3 lower
IM5 lower
IM7 lower
IM3 upper
IM5 upper
IM7 upper
1.0
2-tone Spacing [MHz]
10
2
EGN21A090IV
High Voltage - High Power GaN-HEMT
2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power
V
DS
=50V, I
DS
=500mA, f
1
=2.135GHz, f
2
=2.145GHz(10MHz Spacing)
Peak/Avg. = 8.5dB@0.01% Probability(CCDF)
-10
-15
-20
-25
IMD [dBc]
-30
-35
-40
-45
-50
-55
-60
28
30
Power
Gain
IM3
IM5
Drain
Effi.
50
45
40
35
30
25
20
15
10
5
0
46
Drain Efficiency [%], Power Gain [dB]
-15
-20
ACLR(5MHz offset) [dBc]
-25
-30
-35
-40
-45
-50
-55
-60
30
32
34
ACLR
DPD-OFF
40
35
Power
Gain
30
25
20
15
ACLR
DPD-ON
10
5
0
Drain Efficiency [%], Power Gain [dB]
r
P
im
l
e
32
34
36
38
45
a
n
i
IM7
40
42
44
y
r
Output Power [dBm]
Drain
Effi.
2-Carrier ACLR, Drain Efficiency and Power Gain
vs. Output Power with DPD Operation (note
V
DS
=50V, I
DS
=500mA
f
1
=2.1375GHz, f
2
=2.1425GHz(5MHz Spacing)
Peak/Avg. = 6.5dB@0.01% Probability(CCDF);
Single Carrier Signal
Note) Digital Predistortion evaluation test system:
PMC-Sierra PALADIN-15 DPD chip-set
2-carrier Spectrum with DPD Operation
Pave=42dBm
10dB/div
DPD-OFF
36
38
40
42
44
46
DPD-ON
Output Power [dBm]
Center Frequency=2.14GHz
5MHz/div
3
EGN21A090IV
High Voltage - High Power GaN-HEMT
S-Parameters @V
DS
=50V, I
DS
=500mA, f=1 to 3 GHz,
Z
l
= Z
s
= 50 ohm
+50j
+25j
2.2
+100j
+10j
2.1
2.0GHz
2.0GHz
2.1
2.2
+250j
0
∞
-10j
10
Ω
50
Ω
25
Ω
-250j
-25j
-100j
-50j
±180° 10
Scale for |S
21
|
r
P
+90°
2.2
2.2
2.1
2.0GHz
2.1
2.0GHz
im
l
e
S22
S11
0°
Freq
[GHz]
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
S11
MAG
0.939
0.944
0.938
0.932
0.921
0.905
0.888
0.853
0.800
0.707
0.573
0.415
0.400
0.386
0.373
0.361
0.353
0.343
0.339
0.335
0.337
0.341
0.604
0.843
0.901
0.915
0.912
0.916
0.907
0.901
ANG
167.7
165.7
163.8
161.9
159.4
156.3
152.8
149.1
145.1
140.5
138.0
144.1
145.8
147.9
150.2
153.1
156.1
159.3
163.0
167.3
171.6
176.1
-163.9
-177.7
170.6
163.1
156.9
150.7
144.2
138.0
S21
MAG
0.960
0.927
0.927
0.966
1.034
1.149
1.333
1.614
2.025
2.649
3.506
4.661
4.792
4.921
5.043
5.178
5.327
5.452
5.598
5.741
5.888
6.022
6.500
4.706
2.943
1.950
1.399
1.068
0.852
0.717
ANG
-10.5
-15.6
-20.8
-26.4
-32.6
-39.6
-48.4
-58.9
-72.0
-89.3
-111.5
-140.3
-143.4
-146.8
-150.2
-153.7
-157.4
-160.9
-164.8
-168.9
-173.0
-177.4
132.8
85.1
54.4
35.3
21.7
10.2
0.4
-8.2
S12
MAG
0.002
0.002
0.001
0.002
0.002
0.003
0.003
0.004
0.006
0.009
0.013
0.020
0.020
0.021
0.022
0.022
0.023
0.024
0.025
0.026
0.026
0.027
0.032
0.025
0.017
0.013
0.010
0.008
0.007
0.006
ANG
-36.3
-30.4
-27.5
-18.0
-15.1
-12.9
-11.3
-12.9
-22.3
-35.9
-55.8
-82.5
-85.4
-88.5
-92.1
-95.9
-98.7
-102.9
-106.1
-110.2
-114.2
-118.8
-167.5
147.6
118.4
100.5
84.4
74.9
70.5
72.0
S22
MAG
0.910
0.915
0.915
0.915
0.911
0.907
0.900
0.898
0.892
0.889
0.895
0.887
0.881
0.877
0.871
0.863
0.854
0.844
0.830
0.810
0.792
0.769
0.321
0.345
0.646
0.781
0.848
0.884
0.903
0.910
ANG
-175.8
-177.3
-178.8
179.9
178.3
177.2
175.7
174.2
172.7
171.0
167.8
159.6
158.4
157.2
155.7
154.3
152.7
151.0
149.3
147.2
145.2
143.2
126.1
-138.6
-146.8
-155.9
-162.4
-167.2
-170.3
-173.4
a
n
i
y
r
S12
0.1
Scale for |S
12
| -90°
S21
4
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