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NCV5701ADR2G

Description
Gate Drivers HIGH CURRENT IGBT GATE DR
Categorysemiconductor    Power management   
File Size338KB,20 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NCV5701ADR2G Overview

Gate Drivers HIGH CURRENT IGBT GATE DR

NCV5701ADR2G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryGate Drivers
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOIC-8
ProductIGBT, MOSFET Gate Drivers
Number of Drivers1 Driver
Output Current5 A
Rise Time9.2 ns
Fall Time7.9 ns
Supply Voltage - Max35 V
Supply Voltage - Min5.5 V
Propagation Delay - Max70 ns
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 125 C
TypeHalf Bridge
QualificationAEC-Q100
PackagingReel
FeaturesActive Miller Clamp, DESAT Protection with Programmable Delay
Output Voltage5 V
ShutdownShutdown
Maximum Turn-Off Delay Time75 ns
Maximum Turn-On Delay Time75 ns
Operating Supply Current900 uA
Pd - Power Dissipation700 mW
Factory Pack Quantity2500
NCV5701A, NCV5701B,
NCV5701C
High Current IGBT Gate
Drivers
The NCV5701A, NCV5701B and NCV5701C are high−current,
high−performance stand−alone IGBT drivers for high power
applications that include solar inverters, motor control and
uninterruptible power supplies. The devices offer a cost−effective
solution by eliminating external output buffer. Devices protection
features include accurate Under−voltage−lockout (UVLO),
desaturation protection (DESAT) and Active Low FAULT output. The
drivers also feature an accurate 5.0 V output. The drivers are designed
to accommodate a wide voltage range of bias supplies including
unipolar and NCV5701B even bipolar voltages.
Depending on the pin configuration the devices also include Active
Miller Clamp (NCV5701A) and separate high and low (V
OH
and V
OL
)
driver outputs for system design convenience (NCV5701C).
All three available pin configuration variants have 8−pin SOIC
package.
Features
www.onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
8
MARKING
DIAGRAM
NCV5701X
ALYW
G
1
NCV5701 = Specific Device Code
X
= A, B or C
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
High Current Output (+4/−6 A) at IGBT Miller Plateau voltages
Low Output Impedance for Enhanced IGBT Driving
Short Propagation Delay with Accurate Matching
Direct Interface to Digital Isolator/Opto−coupler/Pulse Transformer
for Isolated Drive, Logic Compatibility for Non−isolated Drive
DESAT Protection with Programmable Delay
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable, Grade 1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
1
8
VIN
VREF
FLT
DESAT
2
3
4
7
6
5
CLAMP
GND
VO
VCC
NCV5701A
1
8
VIN
VREF
FLT
DESAT
2
3
4
7
6
5
VEE
GND
VO
VCC
NCV5701B
NCV5701A Features
Active Miller Clamp to Prevent Spurious Gate Turn−on
NCV5701B Features
1
8
VIN
VREF
FLT
DESAT
2
3
4
7
6
5
GND
VOL
VOH
VCC
Negative Output Voltage for Enhanced IGBT Driving
NCV5701C Features
Separate Outputs for V
OL
and V
OH
Typical Applications
NCV5701C
Motor Control
Uninterruptible Power Supplies (UPS)
Automotive Power Supplies
HEV/EV Powertrain
HEV/EV PTC Heaters
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
October, 2017 − Rev. 0
Publication Order Number:
NCV5701/D

NCV5701ADR2G Related Products

NCV5701ADR2G NCV5701BDR2G NCV5701CDR2G
Description Gate Drivers HIGH CURRENT IGBT GATE DR Gate Drivers HIGH CURRENT IGBT GATE DR Gate Drivers HIGH CURRENT IGBT GATE DR
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer ON Semiconductor ON Semiconductor ON Semiconductor
Product Category Gate Drivers Gate Drivers Gate Drivers
RoHS Details Details Details
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case SOIC-8 SOIC-8 SOIC-8
Product IGBT, MOSFET Gate Drivers IGBT, MOSFET Gate Drivers IGBT, MOSFET Gate Drivers
Number of Drivers 1 Driver 1 Driver 1 Driver
Output Current 5 A 5 A 5 A
Rise Time 9.2 ns 9.2 ns 9.2 ns
Fall Time 7.9 ns 7.9 ns 7.9 ns
Supply Voltage - Max 35 V 35 V 35 V
Supply Voltage - Min 5.5 V 5.5 V 5.5 V
Propagation Delay - Max 70 ns 70 ns 70 ns
Minimum Operating Temperature - 40 C - 40 C - 40 C
Maximum Operating Temperature + 125 C + 125 C + 125 C
Type Half Bridge High Current IGBT Gate Driver High Current IGBT Gate Driver
Qualification AEC-Q100 AEC-Q100 AEC-Q100
Packaging Reel Reel Reel
Features Active Miller Clamp, DESAT Protection with Programmable Delay DESAT Protection with Programmable Delay, Negative Output Voltage DESAT Protection with Programmable Delay, Separate Outputs for VOL and VOH
Output Voltage 5 V - 5 V 5 V
Shutdown Shutdown Shutdown Shutdown
Maximum Turn-Off Delay Time 75 ns 75 ns 75 ns
Maximum Turn-On Delay Time 75 ns 75 ns 75 ns
Operating Supply Current 900 uA 900 uA 900 uA
Pd - Power Dissipation 700 mW 700 mW 700 mW
Factory Pack Quantity 2500 2500 2500
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