BZW06 SERIES
Taiwan Semiconductor
CREAT BY ART
600W, 13V - 376V Transient Voltage Suppressor
FEATURES
- Excellent clamping capability
- Low dynamic impedance
- 600W surge capability at 10 / 1000
μs
waveform
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-204AC (DO-15)
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Steady state power dissipation at T
L
=75°C
lead lengths .375", 9.5mm
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Junction to leads
Junction to ambient on printed circuit
L lead=10mm
Operating junction temperature range
Storage temperature range
Note 1: Non-repetitive current pulse, per fig. 3
SYMBOL
P
PK
P
D
I
FSM
R
θJL
R
θJA
T
J
T
STG
VALUE
600
1.7
100
60
100
- 55 to +175
- 55 to +175
°C/W
°C
°C
UNIT
W
W
A
ORDERING INFORMATION
PART NO.
BZW06-xxx
(Note 1)
PART NO.
SUFFIX
H
PACKING CODE
A0
R0
B0
PACING CODE
SUFFIX
G
PACKAGE
DO-15
DO-15
DO-15
PACKING
1,500 / Ammo box
3,500 / 13" Paper reel
1,000 / Bulk packing
Note 1: "xxx" defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376)
EXAMPLE
EXAMPLE
PART NO.
BZW06-20HA0G
PART NO.
BZW06-20
PART NO.
SUFFIX
H
PACKING CODE
A0
PACING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
Version: J1602
BZW06 SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100000
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
120
P
PPM
, PEAK PULSE POWER, W
10000
Non-repetitive
pulse waveform
shown in fig.3
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
180
200
1000
100
10
0.001
0.01
0.1
1
10
100
tp, PULSE WIDTH, (ms)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
FIG. 4 CLAMPING VOLTAGE CURVE
1000
BWZ06-376
BWZ06-188
tr=10μs
Peak Value
I
PPM
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
100
V
CL
, CLAMPING VOLTAGE(V)
BWZ06-58
BWZ06-33
BWZ06-19
BWZ06-10
10
BWZ06-5V8
tp=20μs
tp=1ms
tp=10ms
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1
0
1
10
100
Ipp, PEAK PULSE CURRENT(A)
1000
1000
BZW06-13
BZW06-58
100
f=1.0MHz
Vsig=50mVp-p
BZW06-171
10
1
10
100
1000
V(
BR
), BREAKDOWN VOLTAGE (V)
Version: J1602
BZW06 SERIES
Taiwan Semiconductor
CREAT BY ART
FIG. 6 TYPICAL JUNCTION CAPACITANCE
10000
100
CJ, JUNCTION CAPACITANCE (pF)
A
INSTANTANEOUS FORWARD
CURRENT(A)
FIG.7 TYPICAL FORWARD CHARACTERISTICS
UNDIRECTIONAL TYPE
1000
BZW06-13B
BZW06-58B
10
100
f=1.0MHz
Vsig=50mVp-p
BZW06-171B
25°C
150°C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
1
10
100
1000
V(
BR
), BREAKDOWN VOLTAGE (V)
FORWARD VOLTAGE(V)
FIG. 8 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10000
FIG. 9 RELATIVE VARIATION OF LEAKAGE CURRENT
vs JUNCTION TEMPERATURE
VR=VRM
1000
TRANSIENT THERMAL
IMPEDANCE(°C/W)
I
R
(T
J
) / I
R
(T
J
=25
o
C)
100
10
10
1
1
0.01
0.1
1
10
100
1000
T, PULSE DURATION (s)
0.1
0
25
50
75
T
J
(°C)
100
125
150
Version: J1602
MEMS sensors
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