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CJF107

Description
SILICON PLANAR POWER DARLINGTON TRANSISTORS
File Size285KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CJF107 Overview

SILICON PLANAR POWER DARLINGTON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS
NPN
PNP
CJF100 CJF105
CJF101 CJF106
CJF102 CJF107
TO-220FP Fully Isolated
Plastic Package
Power Darlington for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
CJF100
CJF105
60
60
CJF101
CJF106
80
80
5.0
3500
1500
8.0
15
1.0
80
0.64
2.0
0.016
- 65 to +150
CJF102
CJF107
100
100
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec, R.H.
<30%, T
A
=25ºC )
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ T
C
=25ºC
Derate Above 25ºC
Total Power Dissipation @ T
A
=25ºC
Derate Above 25ºC
Operating
And
Storage Junction
Temperature Range
V
CBO
V
CEO
V
EBO
(1) V
ISOL
(a)
(b)
I
C
I
CM
I
B
P
tot
P
tot
T
j
, T
stg
V
V
V
V
RMS
A
A
W
W/ºC
W
W/ºC
ºC
(1) RMS Isolation Voltage : (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package in
Screw Mounting Position (for 1sec, R.H.<30%Ta=25ºC; Pulse Test: Pulse Width </=300µs, Duty Cycle</=2%)
THERMAL RESISTANCE
Characteristics
From Junction to Ambient
From Junction to Case
SYMBOL
R
th(j-a)
R
th(j-c)
MAX
62.5
1.56
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaining Voltage
SYMBOL
V
CEO (sus)
*
TEST CONDITION
I
C
=30mA, I
B
=0
CJF100/105
CJF101/106
CJF102/107
V
CE
= I/2 Rated V
CEO
, I
B
=0
V
CB
= Rated V
CBO
, I
E
=0
V
EB
=5V, I
C
=0
MIN
MAX
UNIT
Collector Cut
Off
Current
Emitter Cut
Off
Current
I
CEO
I
CBO
I
EBO
60
80
100
-
-
-
-
-
-
50
50
8.0
V
V
V
µA
µA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

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