Ordering number : ENN8342
2SC6019
2SC6019
Applications
•
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
•
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
15
15
6
7
10
600
0.8
15
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=12V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=500mA
VCE=2V, IC=500mA
Ratings
min
typ
max
0.1
0.1
250
380
400
MHz
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61005EA MS IM TB-00001434 No.8342-1/4
2SC6019
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=10V, f=1MHz
IC=1.5A, IB=30mA
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
15
15
6
30
190
15
Ratings
min
typ
23
85
145
0.85
125
215
1.2
max
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7518-003
6.5
5.0
2.3
0.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
2.3
1.5
4
1.5
0.5
4
7.0
5.5
0.8
1.6
7.5
1
0.5
2
0.8
1.2
3
0 to 0.2
1.2
0.6
0.6
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100µF
VBE= --5V
+
470µF
VCC=5V
OUTPUT
RL
IC=20IB1= --20IB2=3A
7
IC -- VCE
m
8
IC -- VBE
VCE=2V
60m
A
A
50mA
40mA
6
80
7
30mA
Collector Current, IC -- A
6
5
4
3
Collector Current, IC -- A
5
0m
A
4
10
20mA
10mA
3
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1
IB=0mA
0.9
1.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Collector-to-Emitter Voltage, VCE -- V
IT09436
Base-to-Emitter Voltage, VBE -- V
25
°
C
2
Ta=
75
°
C
--25
°
C
2
5mA
IT09437
No.8342-2/4
2SC6019
1000
hFE -- IC
VCE=2V
Gain-Bandwidth Product, f T -- MHz
1000
7
5
f T -- IC
VCE=10V
7
DC Current Gain, hFE
5
Ta=75°C
25°C
3
2
3
--25°C
2
100
7
5
0.01
100
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
100
5 7 10
IT09438
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
7
IT09439
Cob -- VCB
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
VCE(sat) -- IC
5
3
2
0.1
7
5
3
2
0.01
7
5
IC / IB=20
Output Capacitance, Cob -- pF
7
5
3
2
C
5
°
=7
Ta
C
5
°
--2
°
C
25
10
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
3
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector-to-Base Voltage, VCB -- V
7
5
IT09440
3
Collector Current, IC -- A
5 7 10
IT09441
VCE(sat) -- IC
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
2
0.1
7
5
3
2
1.0
Ta
5
°
C
=7
5
°
C
--2
7
Ta= --25°C
25
°C
75
°
C
°
C
25
5 7 1.0
2
3
5 7 10
IT09442
5
0.01
0.01
2
3
5 7 0.1
2
3
3
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
2
10
7
5
Collector Current, IC -- A
1.0
5 7 10
IT09443
ASO
ICP=10A
IC=7A
10ms 1ms
100µs 10µs
Collector Dissipation, PC -- W
PC -- Ta
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
DC Operation
(Tc=25°C)
10
DC
0m
s
Op
er
ati
on
(T
a=
25
°
C
)
0.8
50
0
µ
s
0.6
No
he
at
s
in
k
0.4
0.2
0.01
0.01
Tc=25°C
Single pulse
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2 3
IT09444
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
IT09445
No.8342-3/4
2SC6019
18
16
15
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
PC -- Tc
Collector Dissipation, PC -- W
Case Temperature, Tc --
°C
IT09446
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.8342-4/4
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