Ordering number : ENA0270
2SC6064
2SC6064
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
•
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
80
80
50
6
2
4
0.9
150
--55 to +150
Unit
V
V
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=10V, IC=300mA
VCB=10V, f=1MHz
200
40
420
9
MHz
pF
Ratings
min
typ
max
1
1
560
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805EA MS IM TB-00001910 No. A0270-1/4
2SC6064
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
80
50
6
30
330
40
Conditions
Ratings
min
typ
170
0.9
max
340
1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7519-003
6.9
1.45
2.5
1.0
Switching Time Test Circuit
IB1
INPUT
PW=20µs
D.C.≤1%
4.5
1.0
IB2
RB
OUTPUT
50Ω
VR
+
100µF
+
470µF
RL
1.0
1.0
0.6
0.5
4.0
VBE= --5V
VCC=25V
0.9
1
2
3
0.45
IC=10IB1= --10IB2=700mA
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
2.0
1.8
IC -- VCE
30mA
2.0
IC -- VBE
VCE=2V
25mA
20mA
Collector Current, IC -- A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Collector Current, IC -- A
1.6
1.4
15mA
10mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
5mA
3mA
2mA
5
°
C
0.2
0.4
0.6
1mA
IB=0mA
1.6
1.8
2.0
0.2
0
0
Ta=
7
0.4
25
°
C
--25
°
C
0.8
1.0
1.2
IT10516
Collector-to-Emitter Voltage, VCE -- V
IT10515
Base-to-Emitter Voltage, VBE -- V
No. A0270-2/4
2SC6064
7
5
hFE -- IC
VCE=2V
Gain-Bandwidth Product, f T -- MHz
7
5
f T -- IC
VCE=10V
Ta=75°C
DC Current Gain, hFE
3
25
°
C
3
2
--25
°
C
2
100
7
5
0.01
100
7
5
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
7
5
IT10517
7
Cob -- VCB
Collector Current, IC -- A
IT10518
VCE(sat) -- IC
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
5
3
2
0.1
7
5
3
2
0.01
7
5
IC / IB=10
3
2
10
7
5
°
C
75
a=
T
C
5
°
--2
°
C
25
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector-to-Base Voltage, VCB -- V
7
5
IT10519
3
VCE(sat) -- IC
Collector Current, IC -- A
IT10520
VBE(sat) -- IC
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
0.1
7
5
3
2
1.0
C
Ta= --25
°
75
°
C
25
°
C
C
5
°
=7
C
Ta
5
°
-2
-
°
C
25
7
5
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
3
IT10521
7
5
3
VBE(sat) -- IC
Collector Current, IC -- A
IT10522
ASO
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
ICP=4A
IC=2A
10
ms
<10µs
2
50
0
µ
10
0
µ
s
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
10
0m
s
s
1m
s
DC
1.0
Ta= --25
°
C
op
era
t
ion
7
25
°
C
5
75
°
C
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
0.01
0.1
Ta=25°C
Single pulse
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
Collector Current, IC -- A
IT10523
Collector-to-Emitter Voltage, VCE -- V
IT10524
No. A0270-3/4
2SC6064
1.0
0.9
PC -- Ta
Collector Dissipation, PC -- W
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT10525
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
PS No. A0270-4/4
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