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2SK3614

Description
Power Field-Effect Transistor, 4A I(D), 60V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size52KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK3614 Overview

Power Field-Effect Transistor, 4A I(D), 60V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN

2SK3614 Parametric

Parameter NameAttribute value
Objectid2004909656
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.215 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.5 W
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
注文コード No. N 7 4 2 2
2SK3614
No.
N7422
91603
2SK3614
特長
・超オン抵抗。
・超高速スイッチング。
・4V 駆動。
N チャネル MOS ½シリコン電界効果トランジスタ
超高速スイッチング用
絶対最大定格
Absolute Maximum Ratings / Ta=25℃
ドレイン・½ース電圧
ゲート・½ース電圧
ドレイン電流(DC)
ドレイン電流(パルス)
許容損失
チャネル温度
保存周囲温度
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW ≦ 10µs, duty cycle ≦ 1%
セラミック基板(250mm
2
× 0.8mm)装着時
Tc=25℃
60
± 20
4
16
1.5
3.5
150
− 55 ∼+ 150
min
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ± 16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=2A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
60
typ
unit
V
V
A
A
W
W
max
1
1.2
2
3.6
110
150
300
54
34
± 10
2.6
145
215
unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
次ページへ続く。
電気的特性
Electrical Characteristics / Ta=25℃
ドレイン・½ース降伏電圧
ドレイン・½ースしゃ断電流
ゲート・½ースもれ電流
ゲート・½ースしゃ断電圧
順伝達アドミタンス
ドレイン・½ース間オン抵抗
入力容量
出力容量
帰還容量
単½品名表示:LK
V(BR)DSS
IDSS
IGSS
VGS(off)
y
fs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
外½図 2062A
(unit : mm)
4.5
1.6
1.5
本書記載の½品は、極めて高度の信頼性を
要する用途
(生½維持装½、
航空機のコント
ロールシステム等、多大な人的・物的損害
を及ぼす恐れのある用途)
に対応する仕様に
はなっておりません。そのような場合には、
あらかじめ三洋電機販売窓口までご相談下
さい。
本書記載の規格値(最大定格、動½条件範囲
等) を瞬時たりとも越えて½用し、その結果
発生した機器の欠陥について、弊社は責任
を負いません。
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5
4.25max
0.4
(Bottom view)
0.75
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
〒370-0596 群馬県邑½郡大泉町坂田一丁目1番1号
91603 TS IM ◎½藤 TA-3952 No.7422-1/4
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