Ordering number : ENN8112
2SK3617
2SK3617
Features
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
6
24
1
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=3A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
1.2
3
5
180
225
530
45
35
9
5
54
25
225
315
Ratings
min
100
1
±10
2.6
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21405PA TS IM TA-100867 No.8112-1/4
2SK3617
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=50V, VGS=10V, ID=6A
VDS=50V, VGS=10V, ID=6A
VDS=50V, VGS=10V, ID=6A
IS=6A, VGS=0
Ratings
min
typ
13
2.1
2.8
0.9
1.2
max
Unit
nC
nC
nC
V
Package Dimensions
unit : mm
2083B
6.5
5.0
4
1.5
2.3
Package Dimensions
unit : mm
2092B
6.5
5.0
4
2.3
1.5
0.5
0.5
7.0
5.5
5.5
7.0
0.8
0.8
1.6
1.2
7.5
0.5
1
0.6
2
3
2.5
0.85
0.7
0.85
0.5
1.2
0.6
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
2.3
2.3
2.3
Switching Time Test Circuit
VDD=50V
10V
0V
VIN
ID=3A
RL=16.7Ω
VIN
PW=10µs
D.C.≤1%
D
VOUT
G
P.G
50Ω
S
2SK3617
5.0
4.5
4.0
ID -- VDS
8.0V
5.0V
6.0V
5
ID -- VGS
VDS=10V
Drain Current, ID -- A
10.0V
4.0V
4
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Drain Current, ID -- A
3.5V
3
3.0V
2
Tc=7
5
0
0.5
1.0
1.5
2.0
2.5
3.0
°
C
1
0
VGS=2.5V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.5
4.0
Drain-to-Source Voltage, VDS -- V
IT04718
Gate-to-Source Voltage, VGS -- V
25
°
C
IT04719
--25
°
C
No.8112-2/4
2SK3617
400
380
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Tc=25°C
ID=3A
420
400
380
360
340
320
300
280
260
240
220
200
180
160
140
120
100
80
--60
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
360
340
320
300
280
260
240
220
200
180
160
140
0
2
4
6
8
10
12
14
16
=
ID
,
3A
V
=4
S
G
,V
V
0V
=1
GS
A
=3
ID
18
20
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
y
fs -- ID
IT08292
10
7
5
Case Temperature, Tc --
°C
IT08293
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
VDS=10V
Forward Drain Current, IF -- A
°
C
-25
=-
Tc
°
C
25
°
C
75
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
0.4
0.6
0.8
1.0
1.2
IT04723
1.0
7
5
3
2
Tc=7
5
°
C
25
°
C
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
2
100
5 7 10
IT04722
SW Time -- ID
td(off)
1000
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
7
5
3
2
Switching Time, SW Time -- ns
7
5
3
2
10
7
5
3
2
1.0
0.1
tf
100
7
5
3
2
td(on)
tr
Coss
Crss
10
2
3
5
7
1.0
2
3
5
7
0
5
10
15
20
25
30
IT08294
Drain Current, ID -- A
10
9
IT04724
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=50V
ID=6A
Drain Current, ID -- A
--25
°
C
IDP=24A
ID=6A
10µs
10
0
µ
s
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
IT08295
1m
10
s
10
ms
DC
0m
op
s
era
tio
n(
Tc
Operation in this
=2
5
°
area is limited by RDS(on).
C
)
0.01
0.1
Tc=25
°
C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
5 7 100
2
IT08296
No.8112-3/4
2SK3617
1.2
PD -- Ta
Allowable Power Dissipation, PD -- W
20
PD -- Tc
Allowable Power Dissipation, PD -- W
1.0
15
0.8
No
0.6
he
at
s
in
10
k
0.4
5
0.2
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08297
Case Temperature, Tc --
°C
IT08298
Note on usage : Since the 2SK3617 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.8112-4/4
京公网安备 11010802033920号
EEWORLD
