Ordering number : ENN8023
2SK3709
2SK3709
Features
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Motor driver, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
37
148
2.0
35
150
--55 to +150
427
37
Unit
V
V
A
A
W
W
°C
°C
mJ
A
*1 VDD=20V, L=500µH, IAV=37A
*2 L≤500µH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=19A
ID=19A, VGS=10V
ID=19A, VGS=4V
1.2
25
36
19
23
25
32
Ratings
min
100
1
±10
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21405QA TS IM TB-00000494 No.8023-1/4
2SK3709
70
ID -- VDS
10V
25
°
C
1.0
1.5
2.0
2.5
6V
Drain Current, ID -- A
50
Drain Current, ID -- A
50
40
40
30
30
20
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
0.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, VDS -- V
50
IT07352
50
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
25
°
C
10
VGS=3V
10
Tc=
75
°
C
--25
°
C
Tc= --
2
IT07353
RDS(on) -- Tc
ID=19A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
45
40
35
30
25
20
15
10
5
2
3
4
5
6
7
8
9
10
IT07354
45
40
35
30
25
20
15
10
5
--50
Tc=75
°C
25
°C
19A
I D=
,
4V
S=
VG
--25°C
19
I D=
A
=10
V GS
,
V
--25
0
25
50
75
100
5
°
C
60
4V
60
125
75
°
C
150
IT07355
Tc=25°C
70
ID -- VGS
VDS=10V
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
Case Temperature, Tc --
°C
100
7
5
3
2
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
7
5
VDS=10V
Forward Current, IF -- A
3
2
°
25
--2
C
C
5
°
10
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
=
Tc
°
C
75
Tc=7
5
°
C
25
°
C
0
0.3
0.6
1.0
0.1
0.01
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
1000
7
5 7 100
IT07356
10000
--25
°
C
0.9
0.1
7
5
3
2
1.2
1.5
IT07357
SW Time -- ID
td (off)
Ciss, Coss, Crss -- VDS
Ciss
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
7
5
3
2
Switching Time, SW Time -- ns
5
3
2
tf
1000
7
5
3
100
7
5
3
0.1
tr
Coss
Crss
td(on)
2
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
0
5
10
15
20
25
30
IT07359
Drain Current, ID -- A
IT07358
Drain-to-Source Voltage, VDS -- V
No.8023-3/4
2SK3709
10
9
VGS -- Qg
VDS=50V
ID=37A
3
2
100
7
5
ASO
IDP=148A
<10µs
10
Gate-to-Source Voltage, VGS -- V
8
Drain Current, ID -- A
ID=37A
10
1m
µ
s
0
µ
s
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
IT07360
3
2
10
7
5
3
2
1.0
7
5
3
2
s
1
10
0ms
0m
DC
s
op
era
tio
n
Operation in this area
is limited by RDS(on).
0.1
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
40
35
30
25
20
15
10
5
0
2
5 7 100
IT07361
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT07362
Case Temperature, Tc --
°C
IT07363
Note on usage : Since the 2SK3709 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.8023-4/4
Analog electronics
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