Ordering number : ENN8017
2SK3834
2SK3834
Features
•
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1. VDD=20V, L=100
µ
H, IAV=60A
*2. L≤100
µ
H, 1 Pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
60
240
2.5
100
150
--55 to +150
225
60
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=30A
ID=30A, VGS=10V
ID=30A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
1.2
26
43
20
24
6250
440
380
26
34
Conditions
Ratings
min
100
1
±10
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
Marking : K3834
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21405QA TS IM TB-00000315 No.8017-1/4
2SK3834
120
ID -- VDS
Tc=25
°C
120
ID -- VGS
Tc=
--25
°
10
8V
6V
100
Drain Current, ID -- A
Drain Current, ID -- A
80
80
4V
60
60
40
40
Tc
=
VGS=3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT07788
60
0
0
0.5
1.0
1.5
2.0
25
°
C
20
20
2.5
3.0
--25
°
C
75
°
C
3.5
4.0
4.5
Drain-to-Source Voltage, VDS -- V
50
Gate-to-Source Voltage, VGS -- V
IT07789
RDS(on) -- VGS
ID=30A
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
45
40
35
30
25
20
15
10
5
2
3
4
5
6
7
8
9
10
IT07790
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
40
Tc=75
°C
30
25
°C
--25
°C
30
I D=
A
4V
S=
, VG
20
30A
I D=
=10
GS
,V
V
10
0
--50
--25
0
25
50
75
100
125
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
Case Temperature, Tc --
°C
100
7
5
3
2
IT07791
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
7
5
VDS=10V
°
C
25
Forward Current, IF -- A
3
2
10
7
5
3
2
1.0
7
5
0.1
0.1
7
5
3
2
0.01
0
0.3
0.6
0.9
1.2
1.4
IT07793
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
1000
7
5 7 100
IT07792
10000
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
Ciss
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
7
5
3
2
Switching Time, SW Time -- ns
5
3
2
tf
1000
7
5
3
2
100
7
5
3
2
0.1
tr
td(on)
100
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT07794
0
5
Tc=7
5
°
C
25
°
C
--25
°
C
C
5
°
--2
=
°
C
Tc
75
10
7
5
3
2
1.0
7
5
3
2
Coss
Crss
10
15
20
25
25
°
C
5.0
150
30
IT07795
Drain-to-Source Voltage, VDS -- V
No.8017-3/4
75
°
C
100
C
V
VDS=10V
2SK3834
10
9
VGS -- Qg
VDS=50V
ID=60A
Drain Current, ID -- A
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=240A
ID=60A
10
µ
s
10
0
µ
s
1m
s
10
ms
10
0m
s
<10µs
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
IT07796
DC
op
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
era
t
ion
0.1
0.1
5 7 10
2
3
5 7 100
2
Total Gate Charge, Qg -- nC
3.0
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
120
IT07797
PD -- Tc
Allowable Power Dissipation, PD -- W
2.5
100
2.0
80
1.5
60
1.0
40
0.5
20
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Amibient Tamperature, Ta --
°C
IT07799
Case Tamperature, Tc --
°C
IT07798
Note on usage : Since the 2SK3834 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.8017-4/4
Microcontroller MCU
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