RJK6036DP3-A0#J2 datasheet, PDF

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RJK6036DP3-A0#J2: DescriptionMOSFET MOSFET; Categorysemiconductor Discrete semiconductor; File Size68KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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RJK6036DP3-A0#J2 Overview

MOSFET MOSFET

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Preliminary Datasheet

RJK6036DP3-A0

600V - 2A - MOS FET

High Speed Power Switching

Features



Low on-resistance

DS(on)

= 5.7



typ. (at I

= 1 A, V

= 10 V, Ta = 25C)



Low drive current



High density mounting

R07DS0841EJ0100

Rev.1.00

Jul 05, 2011

Outline

RENESAS Package code: PRSP0004ZB-A

Package name: SOT-223

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Channel temperature

Storage temperature

Symbol

DSS

GSS

Note1

D (pulse)

Note1

Note2

DR (pulse)

Tch

Tstg

Note2

Ratings

600

±30

150

–55 to +150

Unit

C

Notes: 1. Limited Tch max.. Value at Tc = 25C

2. Pulse width limited by safe operating area.

R07DS0841EJ0100 Rev.1.00

Jul 05, 2011

Page 1 of 3

Notice

Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for

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(Note 1)

(Note 2)

"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

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Colophon 2.0

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