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HS1F F3G

Description
Rectifiers 1A,300V, G.P. HIGH EFFICIENT SMD RECTIFIER
Categorysemiconductor    Discrete semiconductor   
File Size357KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HS1F F3G Overview

Rectifiers 1A,300V, G.P. HIGH EFFICIENT SMD RECTIFIER

HS1F F3G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseDO-214AC-2
Vr - Reverse Voltage300 V
If - Forward Current1 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1 V
Max Surge Current30 A
Ir - Reverse Current5 uA
Recovery Time50 ns
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Operating Temperature Range- 55 C to + 150 C
ProductRectifiers
Factory Pack Quantity1800
Unit Weight0.002116 oz
HS1A - HS1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
T
J
=25°C
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=100°C
T
J
=125°C
t
rr
C
J
R
θJA
T
J
T
STG
50
20
70
- 55 to +150
- 55 to +150
I
R
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
1.0
5
50
150
75
15
ns
pF
°C/W
°C
°C
μA
HS
1A
50
35
50
HS
1B
100
70
100
HS
1D
200
140
200
HS
1F
300
210
300
1
30
1.3
1.7
HS
1G
400
280
400
HS
1J
600
420
600
HS
1K
800
560
800
HS
1M
1000
700
1000
UNIT
V
V
V
A
A
V
Document Number: DS_D1410042
Version: K15
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