Datasheet
Serial EEPROM Series Automotive EEPROM
125℃ Operation Microwire BUS EEPROM (3-wire)
BR93H76-2C
General Description
BR93H76-2C is a serial EEPROM of serial 3-line
interface method.
Package
MSOP8
TSSOP-B8
SOP8
SOP-J8
Features
Conforming to Microwire BUS
Withstands Electrostatic Voltage up to 6kV
(HBM method typ）
Wide Temperature Range -40℃ to +125℃
Same package line-up and same pin configuration
2.5V to 5.5V Single Supply Voltage Operation
Address Auto Increment Function at READ
Operation
Prevention of write mistake
Write prohibition at power on
Write prohibition by command code
Write mistake prevention circuit at low voltage
Self-timed programming cycle
Program Condition Display by READY / BUSY
Low Supply Current
Write Operation (5V) : 0.8mA (Typ)
Read Operation (5V) : 0.5mA (Typ)
Standby Operation (5V) : 0.1μA (Typ)
Compact package MSOP8 / TSSOP-B8 / SOP8 /
SOP-J8
High-Reliability using ROHM Original
Double-Cell structure
More than 50 years data retention (Ta≦125℃)
More than 300,000 write cycles (Ta≦125℃)
Data set to FFFFh on all addresses at shipment
AEC-Q100 Qualified
(Typ)
(Typ)
(Max)
2.90mm x 4.00mm x 0.90mm
3.00mm x 6.40mm x 1.20mm
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
MSOP8
TSSOP-B8
SOP8
SOP-J8
BR93H76-2C
Package Type
Capacity
8Kbit
MSOP8
TSSOP-B8
SOP8
SOP-J8
Bit Format
512×16
Product Name
BR93H76-2C
Supply Voltage
2.5V to 5.5V
RFVM
●
RFVT
●
RF
●
RFJ
●
○Product
structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
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○This
product is not designed protection against radioactive rays
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BR93H76-2C
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Symbol
V
CC
Limit
-0.3 to +6.5
380 (MSOP8)
(1)
410 (TSSOP-B8)
(2)
Permissible Dissipation
Pd
560
(SOP8)
(3)
mW
Unit
V
Datasheet
560 (SOP-J8)
(4)
Storage Temperature Range
Operating Temperature Range
Input Voltage/Output Voltage
Tstg
Topr
‐
-65 to +150
-40 to +125
-0.3 to VCC+0.3
℃
℃
V
When using at Ta=25℃ or higher, 3.1mW(1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1℃.
Memory Cell Characteristics (V
CC
=2.5V to 5.5V)
Limit
Parameter
Min
1,000,000
Write Cycles
(5)
500,000
300,000
100
Data Retention
(5)
60
50
(5) Not 100% TESTED
Unit
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
-
Cycles
Cycles
Cycles
Years
Years
Years
Conditions
Ta≦85℃
Ta≦105℃
Ta≦125℃
Ta≦25℃
Ta≦105℃
Ta≦125℃
Recommended Operating Conditions
Parameter
Supply Voltage
Input Voltage
Symbol
V
CC
V
IN
Limit
2.5 to 5.5
V
Unit
0 to V
CC
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BR93H76-2C
DC Characteristics
(Unless otherwise specified, Ta=-40℃ to +125℃, V
CC
=2.5V to 5.5V)
Limit
Parameter
Symbol
Min
Input Low Voltage
Input High Voltage
Output Low Voltage 1
Output Low Voltage 2
Output High Voltage 1
Output High Voltage 2
Input Leak Current
Output Leak Current
V
IL
V
IH
V
OL1
V
OL2
V
OH1
V
OH2
I
LI
I
LO
I
CC1
Supply Current
I
CC2
I
CC3
Standby Current
◎Radiation
resistance design is not made.
Datasheet
Unit
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.3xV
CC
V
CC
+0.3
0.4
0.2
V
CC
V
CC
10
10
3.0
1.5
3.0
10
V
V
V
V
V
V
μA
μA
mA
mA
mA
μA
Conditions
-0.3
0.7xV
CC
0
0
2.4
V
CC
-0.2
-10
-10
-
-
-
-
I
OL
=2.1mA, 4.0V≦V
CC
≦5.5V
I
OL
=100μA
I
OH
=-0.4mA, 4.0V≦V
CC
≦5.5V
I
OH
=-100μA
V
IN
=0V to V
CC
V
OUT
=0V to V
CC
, C
S
=0V
f
SK
=2MHz, t
E/W
=4ms (WRITE)
f
SK
=2MHz (READ)
f
SK
=2MHz, t
E/W
=4ms (WRAL)
C
S
=0V, DO=OPEN
I
SB
AC Characteristics
(Unless otherwise specified, Ta=-40℃ to +125℃, V
CC
=2.5V to 5.5V)
Parameter
SK Frequency
SK “H” Time
SK “L” Time
CS “L” Time
CS Setup Time
DI Setup Time
CS Hold Time
DI Hold Time
Data “1” Output Delay Time
Data “0” Output Delay Time
Time from CS to Output establishment
Time from CS to High-Z
Write Cycle Time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min
-
200
200
200
50
50
0
50
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
2
-
-
-
-
-
-
-
200
200
150
150
4
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
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© 2012 ROHM Co., Ltd. All rights reserved.
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BR93H76-2C
Serial Input / Output Timing
CS
tCSS
tSKH
tSKL
tCSH
Datasheet
SK
tDIS
tDIH
DI
tPD0
tPD1
DO
(READ)
tDF
DO
(WRITE)
STATUS VALID
Figure 1. Serial Input / Output Timing Diagram
○Data
is taken from DI, in sync with the rise of SK.
○At
READ command, data is outputted from DO in sync with the rise of SK.
○After
WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H”
after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to
“L”, DO sets to High-Z state.
○To
execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset
Block Diagram
CS
Command decode
Control
Power source voltage detection
SK
Clock generation
Write
prohibition
Address
buffer
High voltage occurrence
DI
Command
register
9bit
Address
decoder
9bit
8,192 bit
EEPROM
DO
Data
register
Dummy bit
16bit
R/W
amplifier
16bit
Figure 2. Block Diagram
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© 2012 ROHM Co., Ltd. All rights reserved.
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BR93H76-2C
Pin Configuration
TOP VIEW
VCC
NC
NC
GND
Datasheet
8
7
6
5
BR93H76RFVM-2C:MSOP8
BR93H76RFVT-2C :TSSOP-B8
BR93H76RF-2C :SOP8
BR93H76RFJ-2C :SOP-J8
1
CS
2
SK
3
DI
4
DO
Figure 3. Pin Configuration
Pin Descriptions
Pin Number
1
2
3
4
5
6,7
8
Pin Name
CS
SK
DI
DO
GND
NC
VCC
I/O
Input
Input
Input
Output
-
-
-
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output, READY / BUSY status output
Ground, 0V
Non connected terminal, VCC, GND or OPEN
Power supply, 2.5V to 5.5V
Function
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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TSZ02201-0R1R0G100040-1-2
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