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PMWD19UN

Description
DUAL uTRENCHMOS ULTRA LOW LEVEL FET
CategoryDiscrete semiconductor    The transistor   
File Size76KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PMWD19UN Overview

DUAL uTRENCHMOS ULTRA LOW LEVEL FET

PMWD19UN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Maximum drain current (Abs) (ID)5.6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Humidity sensitivity level2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.3 W
surface mountYES
PMWD19UN
Dual
µTrenchMOS™
ultra low level FET
Rev. 01 — 20 December 2002
M3D647
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMWD19UN in SOT530-1 (TSSOP8).
1.2 Features
s
Surface mounting package
s
Very low threshold
s
Low profile
s
Fast switching.
1.3 Applications
s
Portable appliances
s
Battery management
s
PCMCIA cards
s
Load switching.
1.4 Quick reference data
s
V
DS
30 V
s
P
tot
2.3 W
s
I
D
5.6 A
s
R
DSon
23 mΩ.
2. Pinning information
Table 1:
Pin
1
2,3
4
5
6,7
8
Pinning - SOT530-1, simplified outline and symbol
Description
drain1 (d1)
source1 (s1)
gate1 (g1)
gate2 (g2)
source2 (s2)
drain2 (d2)
1
Top view
4
MBK885
Simplified outline
8
5
Symbol
d1
d2
s1
g1
s2
g2
MSD901
SOT530-1
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