ZVP2106C datasheet, PDF - EEWORLD Datasheet

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ZVP2106C: DescriptionP-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVP2106C Overview

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVP2106C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.28 A
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	20 pF
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVP2106C

ISSUE 2 MARCH 94

FEATURES

* 60 Volt V

DS

* R

DS(on)

=5Ω

G

D

REFER TO ZVP2106A FOR GRAPHS

S

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

V

DS

SYMBOL

-60

E-Line

TO92 Compatible

VALUE

-280

-4

±

20

UNIT

V

mA

A

V

700

-55 to +150

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source

On-State Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

150

100

60

20

7

15

12

15

-1

5

-60

-1.5

-3.5

20

-0.5

-100

V

nA

µ

A

µ

A

I

D

=-1mA, V

GS

=0V

ID=-1mA, V

DS

= V

GS

V

GS

=

±

20V, V

DS

=0V

V

DS

=-60 V, V

GS

=0

V

DS

=-48 V, V

GS

=0V, T=125°C

(2)

A

Ω

V

DS

=-18 V, V

GS

=-10V

V

GS

=-10V,I

D

=-500mA

mS

pF

ns

V

DD

≈

-18V, I

D

=-500mA

V

DS

=-18V, V

GS

=0V, f=1MHz

V

DS

=-18V,I

D

=-500mA

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2% (2) Sample test.

(3) Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator

3-420

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