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FCH104N60F-F085

Description
MOSFET 600V N-Channel SuperFET II MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size869KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FCH104N60F-F085 Overview

MOSFET 600V N-Channel SuperFET II MOSFET

FCH104N60F-F085 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current37 A
Rds On - Drain-Source Resistance275 mOhms
Vgs th - Gate-Source Threshold Voltage3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge109 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation357 W
Channel ModeEnhancement
Height20.82 mm
Length15.87 mm
Transistor Type1 N-Channel
Width4.82 mm
Fall Time5 ns
Rise Time23 ns
Factory Pack Quantity450
Typical Turn-Off Delay Time94 ns
Typical Turn-On Delay Time35 ns
Unit Weight0.225401 oz
FCH104N60F-F085 N-Channel SuperFET, 600V, 37A, 104mohm
FCH104N60F-F085
N-Channel SuperFET II FRFET MOSFET
600 V, 37 A, 104 mΩ
Features
Typical R
DS(on)
= 91 mΩ at V
GS
= 10 V, I
D
= 18.5 A
Typical Q
g(tot)
= 109 nC at V
GS
= 10V, I
D
= 18.5 A
UIS Capability
Qualified to AEC Q101
RoHS Compliant
D
G
G
D
Description
SuperFET® II MOSFET is
ON
Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching performance,
dv/dt rate and higher avalanche energy. Consequently SuperFETII is
very well suited for the Soft switching and Hard Switching topologies
like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved
Boost PFC, Boost PFC for HEV-EV automotive.
SuperFET II FRFET® MOSFET’s optimized body diode reverse
recovery performance can remove additional component and
improve system reliability.
S
TO-247
S
Application
Automotive On Board Charger
Automotive DC/DC converter for HEV
Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Drain to Source Voltage
V
DSS
V
GS
I
D
E
AS
dv/dt
P
D
R
θJC
R
θJA
Gate to Source Voltage
Drain Current - Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Rating
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
Derate Above 25 C
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
(Note 4)
o
Parameter
Ratings
600
±20
T
C
= 25°C
T
C
= 100°C
(Note 2)
(Note 3)
37
24
See Fig 4
809
100
50
357
2.85
-55 to + 150
0.35
40
Units
V
V
A
A
A
mJ
V/ns
W
W/
o
C
o
o
o
T
J
, T
STG
Operating and Storage Temperature
C
C/W
C/W
Package Marking and Ordering Information
Device Marking
FCH104N60F
Device
FCH104N60F-F085
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Notes:
1: Current is limited by bondwire configuration.
2: Starting T
J
= 25°C, L = 35mH, I
AS
= 6.8A, V
DD
= 100V during inductor charging and V
DD
= 0V during time in avalanche.
3: I
SD
18.5A, di/dt
200 A/us, V
DD
380V, starting T
J
= 25°C.
4: R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is guaranteed by design, while R
θJA
is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in
2
pad of 2oz copper.
©2014
Semiconductor Components Industries, LLC.
August-2017, Rev2
Production Order Number:
FCH104N60F-F085/D
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