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FDS8878 N-Channel PowerTrench
®
MOSFET
December 2008
FDS8878
N-Channel PowerTrench
®
MOSFET
30V, 10.2A, 14mΩ
Features
r
DS(on)
= 14mΩ, V
GS
= 10V, I
D
= 10.2A
r
DS(on)
= 17mΩ, V
GS
= 4.5V, I
D
= 9.3A
High performance trench technology for extremely low
r
DS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
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Making friends through disassembly
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