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RSQ035N03

Description
4V Drive Nch MOSFET
File Size45KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RSQ035N03 Overview

4V Drive Nch MOSFET

RSQ035N03
Transistors
4V Drive Nch MOS FET
RSQ035N03
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
TSMT6
1.0MAX
0.85
0.7
Features
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
1pin mark
2.9
1.9
0.95 0.95
(6)
(5)
(4)
1.6
2.8
0~0.1
(1)
(2)
(3)
0.4
0.16
Applications
Switching
Each lead has same dimensions
Abbreviated symbol : QN
Packaging specifications
Package
Type
RSQ035N03
Code
Basic ordering unit (pieces)
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
∗2
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
30
20
±3.5
±14
1.0
14
1.25
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
100
Unit
°C/W
0.3~0.6
1/2
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