PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in
SOT23 package
Rev. 01 — 15 July 2005
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT23 small Surface
Mounted Device (SMD) plastic package.
Table 1:
Product overview
Package
Philips
PMEG2005ET
PMEG3005ET
PMEG4005ET
SOT23
SOT23
SOT23
JEITA
-
-
-
single diode
single diode
single diode
Configuration
Type number
1.2 Features
s
Forward current: 0.5 A
s
Very low forward voltage
s
Small SMD plastic package
1.3 Applications
s
s
s
s
s
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
Philips Semiconductors
PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in SOT23 package
1.4 Quick reference data
Table 2:
Symbol
I
F
V
R
Quick reference data
Parameter
forward current
reverse voltage
PMEG2005ET
PMEG3005ET
PMEG4005ET
V
F
forward voltage
PMEG2005ET
PMEG3005ET
PMEG4005ET
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Conditions
Min
-
-
-
-
Typ
-
-
-
-
355
380
420
Max
0.5
20
30
40
390
430
470
Unit
A
V
V
V
mV
mV
mV
I
F
= 500 mA
[1]
-
-
-
2. Pinning information
Table 3:
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
3
Simplified outline
3
Symbol
1
2
n.c.
mlc357
3. Ordering information
Table 4:
Ordering information
Package
Name
PMEG2005ET
PMEG3005ET
PMEG4005ET
-
-
-
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT23
SOT23
SOT23
Type number
9397 750 15183
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 July 2005
2 of 12
Philips Semiconductors
PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in SOT23 package
4. Marking
Table 5:
Marking codes
Marking code
[1]
P3*
P4*
P5*
Type number
PMEG2005ET
PMEG3005ET
PMEG4005ET
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
reverse voltage
PMEG2005ET
PMEG3005ET
PMEG4005ET
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Conditions
Min
-
-
-
-
Max
20
30
40
0.5
3.9
10
280
420
150
+150
+150
Unit
V
V
V
A
A
A
mW
mW
°C
°C
°C
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
≤
1 ms;
δ ≤
0.5
t
p
= 8 ms square
wave
T
amb
≤
25
°C
[1]
-
-
-
-
-
−65
−65
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1] [2]
[1] [3]
Min
-
-
Typ
-
-
Max
440
300
Unit
K/W
K/W
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[2]
[3]
9397 750 15183
Product data sheet
Rev. 01 — 15 July 2005
3 of 12
Philips Semiconductors
PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in SOT23 package
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
PMEG2005ET
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
PMEG3005ET
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
PMEG4005ET
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
R
reverse current
PMEG2005ET
PMEG3005ET
PMEG4005ET
C
d
diode capacitance
PMEG2005ET
PMEG3005ET
PMEG4005ET
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
90
150
210
280
355
90
150
215
285
380
95
155
220
295
420
15
40
12
40
7
30
66
55
43
Max
130
190
240
330
390
130
200
250
340
430
130
210
270
350
470
40
200
30
150
20
100
80
70
50
Unit
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
µA
µA
µA
µA
µA
µA
pF
pF
pF
V
R
= 10 V
V
R
= 20 V
V
R
= 10 V
V
R
= 30 V
V
R
= 10 V
V
R
= 40 V
V
R
= 1 V; f = 1 MHz
9397 750 15183
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 July 2005
4 of 12
Philips Semiconductors
PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in SOT23 package
10
4
I
F
(mA)
10
3
006aaa517
I
R
(µA)
10
5
(1)
006aaa518
10
4
10
3
10
2
(2)
(3)
(4)
10
2
10
1
(1)
(2)
(3)
(4)
(5)
10
10
−1
(5)
10
−2
1
0
0.2
0.4
V
F
(V)
0.6
10
−3
0
5
10
15
V
R
(V)
20
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1. PMEG2005ET: Forward current as a function of
forward voltage; typical values
120
C
d
(pF)
80
Fig 2. PMEG2005ET: Reverse current as a function of
reverse voltage; typical values
006aaa249
40
0
0
4
8
12
16
V
R
(V)
20
T
amb
= 25
°C;
f = 1 MHz
Fig 3. PMEG2005ET: Diode capacitance as a function of reverse voltage; typical values
9397 750 15183
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 July 2005
5 of 12
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