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CAT28C65BGA-90T

Description
128Kx8 EEPROM
Categorystorage    storage   
File Size417KB,13 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Environmental Compliance
Download Datasheet Parametric View All

CAT28C65BGA-90T Overview

128Kx8 EEPROM

CAT28C65BGA-90T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCatalyst
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum access time90 ns
command user interfaceNO
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee3
length13.965 mm
memory density65536 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size32 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height3.55 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
switch bitYES
width11.425 mm
Maximum write cycle time (tWC)5 ms
Base Number Matches1
CAT28C65B
CAT28C65B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
I
Fast read access times:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
I
Commercial, industrial and automotive
– 90/120/150ns
I
Low power CMOS dissipation:
temperature ranges
I
Automatic page write operation:
– Active: 25 mA max.
– Standby: 100
µ
A max.
I
Simple write operation:
– 1 to 32 bytes in 5ms
– Page load timer
I
End of write detection:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
I
Fast write cycle time:
– Toggle bit
DATA
polling
– RDY/BUSY
BUSY
I
100,000 program/erase cycles
I
100 year data retention
– 5ms max
I
CMOS and TTL compatible I/O
I
Hardware and software write protection
DESCRIPTION
The CAT28C65B is a fast, low power, 5V-only CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling, a RDY/BUSY pin and Toggle status bits
signal the start and end of the self-timed write cycle.
Additionally, the CAT28C65B features hardware and
software write protection.
The CAT28C65B is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
8,192 x 8
EEPROM
ARRAY
32 BYTE PAGE
REGISTER
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING,
TOGGLE BIT &
RDY/BUSY LOGIC
COLUMN
DECODER
I/O0–I/O7
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
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