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CAT28C512LA-15T

Description
512K-Bit CMOS PARALLEL E2PROM
File Size415KB,12 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Download Datasheet View All

CAT28C512LA-15T Overview

512K-Bit CMOS PARALLEL E2PROM

CAT28C512/513
512K-Bit CMOS PARALLEL EEPROM
FEATURES
I
Fast Read Access Times: 120/150 ns
I
Low Power CMOS Dissipation:
I
Automatic Page Write Operation:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
–Active: 50 mA Max.
–Standby: 200
µ
A Max.
I
Simple Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
I
End of Write Detection:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
I
Fast Write Cycle Time:
–Toggle Bit
–DATA Polling
DATA
I
Hardware and Software Write Protection
I
100,000 Program/Erase Cycles
I
100 Year Data Retention
I
Commercial, Industrial and Automotive
–5ms Max
I
CMOS and TTL Compatible I/O
Temperature Ranges
DESCRIPTION
The CAT28C512/513 is a fast,low power, 5V-only CMOS
parallel EEPROM organized as 64K x 8-bits. It requires
a simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C512/513 features hardware and software write
protection.
The CAT28C512/513 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 32-pin DIP, PLCC and TSOP packages.
BLOCK DIAGRAM
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
65,536 x 8
EEPROM
ARRAY
128 BYTE PAGE
REGISTER
A7–A15
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
I/O BUFFERS
TIMER
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
I/O0–I/O7
A0–A6
ADDR. BUFFER
& LATCHES
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
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