Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin surface mount
plastic package.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
D
T
j
R
DS(ON)
I
ISL
PARAMETER
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
Input supply current
V
IS
= 5 V
MAX.
50
8
40
150
100
650
UNIT
V
A
W
˚C
mΩ
µA
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
FEATURES
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
INPUT
RIG
POWER
MOSFET
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT428
PIN
1
2
3
tab
input
drain
source
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
D
TOPFET
I
P
2
drain
1
3
S
October 2001
1
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
DS
I
D
I
D
I
I
I
IRM
P
D
T
stg
T
j
T
sold
PARAMETER
Continuous drain source voltage
1
Continuous drain current
Continuous drain current
Continuous input current
Non-repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
2
Case temperature
CONDITIONS
-
V
IS
= 5 V; T
mb
= 25 ˚C
V
IS
= 5 V; T
mb
≤
110 ˚C
-
t
p
≤
1 ms
T
mb
≤
25 ˚C
-
normal operation
during soldering
MIN.
-
-
-
-5
-10
-
-55
-
-
MAX.
50
self -
limited
8
5
10
40
175
150
260
UNIT
V
A
A
mA
mA
W
˚C
˚C
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
E
DSM
E
DRM
PARAMETER
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
CONDITIONS
I
DM
= 8 A; V
DD
≤
20 V
T
mb
≤
25 ˚C
T
mb
≤
95 ˚C; f = 250 Hz
MIN.
-
-
MAX.
100
20
UNIT
mJ
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
V
DS
PARAMETER
Drain source voltage
3
REQUIRED CONDITION
4 V
≤
V
IS
≤
5.5 V
MIN.
0
MAX.
35
UNIT
V
THERMAL CHARACTERISTIC
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance
Junction to mounting base
Junction to ambient
CONDITIONS
-
minimum footprint FR4 PCB
MIN.
-
-
TYP.
2.5
70
MAX.
3.1
-
UNIT
K/W
K/W
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode.
October 2001
2
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
OUTPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Off-state
V
(CL)DSS
I
DSS
Drain-source clamping voltage
CONDITIONS
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 1 A; t
p
≤
300
µs; δ ≤
0.01
Drain source leakage current
On-state
R
DS(ON)
Drain-source resistance
V
DS
= 40 V
T
mb
= 25 ˚C
I
DM
= 3 A; t
p
≤
300
µs; δ ≤
0.01
V
IS
≥
4.4 V
T
mb
= 25 ˚C
V
IS
≥
4 V
T
mb
= 25 ˚C
-
-
-
-
-
68
-
72
190
100
200
105
mΩ
mΩ
mΩ
mΩ
50
50
-
-
-
60
-
0.1
-
70
100
10
V
V
µA
µA
MIN.
TYP.
MAX.
UNIT
OVERLOAD CHARACTERISTICS
-40˚C
≤
T
mb
≤
150˚C unless otherwise specified.
SYMBOL
I
D
PARAMETER
Short circuit load
Drain current limiting
CONDITIONS
V
DS
= 13 V
V
IS
= 5 V;
4.4 V
≤
V
IS
≤
5.5 V
4 V
≤
V
IS
≤
5.5 V
P
D(TO)
T
DSC
T
j(TO)
Overload protection
Overload power threshold
Characteristic time
Overtemperature protection
Threshold junction
temperature
2
150
170
-
˚C
V
IS
= 5 V;
T
mb
= 25˚C
device trips if P
D
> P
D(TO)
which determines trip time
1
T
mb
= 25˚C
MIN.
8
6
5
20
200
TYP.
12
-
-
55
350
MAX.
16
18
18
80
600
UNIT
A
A
A
W
µs
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2
This is independent of the dV/dt of input voltage V
IS
.
October 2001
3
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL
V
IS(TO)
I
IS
I
ISL
V
ISR
t
lr
V
(CL)IS
R
IG
PARAMETER
Input threshold voltage
Input supply current
Input supply current
Protection reset voltage
1
Latch reset time
Input clamping voltage
Input series resistance
2
to gate of power MOSFET
CONDITIONS
V
DS
= 5 V; I
D
= 1 mA
T
mb
= 25˚C
normal operation;
protection latched;
reset time t
r
≥
100
µs
V
IS1
= 5 V, V
IS2
< 1 V
I
I
= 1.5 mA
T
mb
= 25˚C
V
IS
= 5 V
V
IS
= 4 V
V
IS
= 5 V
V
IS
= 3 V
MIN.
0.6
1.1
100
80
200
130
1.5
10
5.5
-
TYP.
-
1.6
220
195
400
250
2
40
-
33
MAX.
2.4
2.1
400
330
650
430
2.9
100
8.5
-
UNIT
V
V
µA
µA
µA
µA
V
µs
V
kΩ
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C; V
DD
= 13 V; resistive load R
L
= 4
Ω.
Refer to waveform figure and test circuit.
SYMBOL
t
d on
t
r
t
d off
t
f
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
IS
= 0 V
CONDITIONS
V
IS
= 5 V
MIN.
-
-
-
-
TYP.
10
20
30
20
MAX.
20
40
60
40
UNIT
µs
µs
µs
µs
1
The input voltage below which the overload protection circuits will be reset.
2
Not directly measureable from device terminals.
October 2001
4
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
b2
A
A1
mounting
base
A2
D1
E1
D
HE
L2
2
L
L1
1
b1
e
e1
b
3
w
M
A
c
0
10
scale
20 mm
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
mm
2.38
2.22
A1
(1)
0.65
0.45
A2
0.89
0.71
b
0.89
0.71
b1
max.
1.1
0.9
b2
5.36
5.26
c
0.4
0.2
D1
E
D
max. max. max.
6.22
5.98
4.81
4.45
6.73
6.47
E1
min.
4.0
e
e1
HE
max.
10.4
9.6
L
2.95
2.55
L1
min.
0.5
L2
0.7
0.5
w
0.2
y
max.
0.2
2.285 4.57
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
Fig.2. SOT428 surface mounting package
1
, centre pin connected to mounting base.
1
Epoxy meets UL94 V0 at 1/8". Net mass: 1.1 g
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
October 2001
5
Rev 1.000
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