GS81302TT37E-333I datasheet, PDF

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GS81302TT37E-333I: DescriptionSRAM 1.8 or 1.5V 4M x 36 144M; Categorystorage storage; File Size1MB，30 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS81302TT37E-333I Overview

SRAM 1.8 or 1.5V 4M x 36 144M

GS81302TT37E-333I Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Factory Lead Time	12 weeks
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE, LATE WRITE
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	150994944 bit
Memory IC Type	DDR SRAM
memory width	36
Number of functions	1
Number of terminals	165
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX36
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

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GS81302TT07/10/19/37E-450/400/350/333/300

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• 2.0 Clock Latency

• Simultaneous Read and Write SigmaDDR™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write controls sampled at data-in time

• Burst of 2 Read and Write

• Dual-Range On-Die Termination (ODT) on Data (D), Byte

Write (BW), and Clock (K, K) inputs

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• Data Valid pin (QVLD) Support

• IEEE 1149.1 JTAG-compliant Boundary Scan

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

144Mb SigmaDDR

-II+

Burst of 2 SRAM

450 MHz–300 MHz

1.8 V V

1.8 V or 1.5 V I/O

SigmaDDR™ Family Overview

for

-450

The GS81302TT07/10/19/37E are built in compliance with the

SigmaDDR-II+ SRAM pinout standard for Common I/O

synchronous SRAMs. They are 150,994,944-bit (144Mb)

Parameter Synopsis

-400

-350

2.86 ns

0.45 ns

-333

3.0 ns

0.45 ns

-300

3.3 ns

0.45 ns

tKHKH

tKHQV

2.2 ns

2.5 ns

0.45 ns

Rev: 1.00b 8/2017

1/30

sig

n—

sco

inu

SRAMs. The GS81302TT07/10/19/37E SigmaDDR-II+

SRAMs are just one element in a family of low power, low

voltage HSTL I/O SRAMs designed to operate at the speeds

needed to implement economical high performance

networking systems.

Clocking and Addressing Schemes

The GS81302TT07/10/19/37E SigmaDDR-II+ SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer.

Each internal read and write operation in a SigmaDDR-II+ B2

RAM is two times wider than the device I/O bus. An input data

bus de-multiplexer is used to accumulate incoming data before

it is simultaneously written to the memory array. An output

data multiplexer is used to capture the data produced from a

single memory array read and then route it to the appropriate

output drivers as needed. Therefore, the address field of a

SigmaDDR-II+ B2 RAM is always one address pin less than

the advertised index depth (e.g., the 16M x 8 has an 8M

addressable index).

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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