ASB0320/30/40
SMD Schottky Barrier Diode
Features
I
O
=
350mA
V
R
=
20V to 40V
- Low forward voltage
- Designed for mounting on small surface.
- Extremely thin package.
- Majority carrier conduction.
- Lead-free device
0.010(0.25)Typ.
0.033(0.85)
0.027(0.70)
General Description
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.012(0.30)Typ.
0.014(0.35)Typ.
Dimensions in inches and (millimeter)
P
+
1005(2512)
0.102(2.60)
0.095(2.40)
Mechanical Data
- Case : 0603(1608) 1005(2512) standard package,
molded plastic.
- Terminals : Gold plated, solderable per
MIL-STD-750, method 2026.
- Polarity : Indicated by cathode band.
- Mounting position : Any.
-
Weight : BD:0.003gram (approximately)
0.014(0.35)Typ.
0.014(0.35)Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
0.012(0.30)Typ.
Dimensions in inches and (millimeter)
BF:0.006gram (approximately)
Ordering information
A
XX 03X0 XX
Feature
SB : Schottky Barrier
Part No.
2: ASB0320
3: ASB0330
4: ASB0340
Package type
BD-0603
BF-1005
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 2, 2004
1/3
ASB0320/30/40
SMD Schottky Barrier Diode
Maximum Rating
(at T
A
=25ºC unless otherwise noted)
Symbol
Parameter
ASB0320
ASB0330
ASB0340
Unit
V
RRM
, V
R
V
R
(RMS)
I
O
I
FRM
I
FSM
T
STG
T
j
Repetitive peak reverse voltage
Reverse voltage
RMS reverse voltage
Average forward rectified current
Repetitive peak forward current
Forward current, surge peak 8.3 ms
single half sine-wave
Storage temperature
Junction temperature
20
14
30
21
350
450
1.5
-40 to +125
-40 to +125
40
28
V
V
mA
mA
A
ºC
ºC
Electrical Characteristics
(at T
A
=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
F
Forward voltage
ASB0320
ASB0330
ASB0340
I
F
=20mA
I
F
=200mA
V
R
=10V
V
R
=20V
V
R
=30V
f=1MHz, and 0 VDC
reverse voltage
I
F
=I
R
=10mA, Irr=0.1
×
I
R
,
R
L
=100 ohm
-
-
-
-
-
-
-
-
-
-
-
-
50
6.4
0.37
0.6
5
5
5
-
-
V
I
R
C
T
Trr
Reverse current
uA
pF
nS
Capacitance between terminals
Reverse recovery time
Anachip Corp.
www.anachip.com.tw
2/3
Rev. 1.0 Aug 2, 2004
ASB0320/30/40
SMD Schottky Barrier Diode
Rating And Characteristic Curves
Fig. 1 – Forward characteristics
Fig. 2 – Capacitance between terminals
characteristics
Fig. 3 – Current derating curve
Marking Information
BH
BJ
BK
ASB0320
ASB0330
ASB0340
Anachip Corp.
www.anachip.com.tw
3/3
Rev. 1.0 Aug 2, 2004
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