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DSEP2X35-06C

Description
35 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size60KB,1 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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DSEP2X35-06C Overview

35 A, 600 V, SILICON, RECTIFIER DIODE

DSEP 2x35-06C
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
Preliminary Data
V
RSM
V
600
V
RRM
V
600
DSEP 2x 35-06C
Type
I
FAV
= 2x35 A
V
RRM
= 600 V
t
rr
= 20 ns
SOT-227 B,
miniBLOC
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Test Conditions
T
C
= 100°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
100
35
tbd
300
1.2
A
A
A
Features
• International standard package miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent FRED in 1 package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
T
C
= 25°C
50/60 Hz, RMS, I
ISOL
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
ne
r
0.1
20
4.5
-40...+150
150
-40...+150
210
2500
w
fo
Test Conditions
1.1-1.5/9-13
1.1-1.5/9-13
30
Symbol
I
R
t
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 150°C
I
F
= 35 A;
T
VJ
= 125°C
T
VJ
= 25°C
No
Characteristic Values
typ.
max.
0.25
1.0
1.97
2.50
0.6
mA
mA
V
V
K/W
K/W
ns
7.0
A
V
F
R
thJC
R
thCH
t
rr
I
RM
with heatsink compound
I
F
= 1 A; -di/dt = 300 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
de
0.3
g
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
si
A
mJ
A
°C
°C
°C
W
V~
Nm/lb.in.
Nm/lb.in.
Recommended replacement:
2x DPH30IS600HI
gn
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
20080317a
1
-1
319

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