HGT1S14N41G3VLS, HGTP14N41G3VL
Data Sheet
December 2001
14A, 410V N-Channel, Logic Level, Voltage
Clamping IGBTs
This N-Channel IGBT is a MOS gated,
logic level
device
which is intended to be used as an ignition coil driver in
automotive ignition circuits.
Unique features include an
active voltage clamp between the collector and the gate
which provides
Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide
ESD
protection
for the logic level gate. Both a series resistor and
a shunt resister are provided in the gate circuit
Formerly Developmental Type TA49360.
Features
• Ignition Energy = 340mJ at T
J (STARTING)
= 25
o
C
• Typical Internal Clamp Voltage = 410V at T
J
= 25
o
C
• Logic Level Gate Drive
• ESD Gate Protection
• T
J
= 175
o
C
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HGT1S14N41G3VLS
HGTP14N41G3VL
PACKAGE
TO-263AB
TO-220AB
BRAND
14N41GVL
14N41GVL
Packaging
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A
G
COLLECTOR
(FLANGE)
E
Symbol
COLLECTOR
R
1
GATE
R
2
JEDEC TO-220AB
E
C
G
EMITTER
COLLECTOR
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
HGT1S14N41G3VLS, HGTP14N41G3VL
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S14N41G3VLS,
HGTP14N41G3VL
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 5V, T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 3 mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
at L = 3 mH, T
C
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy at L = 3 mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
Electrostatic Discharge Voltage HBM at 250pF, 1500Ω All Pin Configurations . . . . . . . . . ESD
Electrostatic Discharge Voltage MM at 200pF, 0Ω All Pin Configurations . . . . . . . . . . . . . ESD
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
430
445
24
25
18
±10
15
11.5
340
136
0.91
-55 to 175
-55 to 175
5
2
300
260
UNITS
V
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
kV
kV
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if I
GEM
is limited to 10mA.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CER
BV
CES
V
GEP
Q
G(ON)
BV
CE(CL)
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 10mA, R
G
= 1kΩ, V
GE
= 0V,
T
J
= -40
o
C to 150
o
C (Figure 17)
I
C
= 10mA, V
GE
= 0V, T
J
= -40
o
C to 150
o
C
I
C
= 10A, V
CE
= 12V
I
C
= 10A, V
CE
= 12V, V
GE
= 5V (Figure 16)
I
C
= 15A, R
G
= 1kΩ
I
C
= 10mA
V
CE
= 350V,
V
GE
= 0V (Figure 13)
V
CE
= 15V, V
GE
= 0V
I
ECS
V
GE(TH)
V
CE(ON)
V
CE(ON)
V
EC
= 24V, V
GE
= 0V
(Figure 13)
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -40
o
C
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 175
o
C
MIN
380
395
-
-
380
24
-
-
-
-
-
-
1.3
-
-
-
-
-
-
-
-
-
10
TYP
410
425
3
26
410
28
-
-
-
-
-
-
1.8
1.6
1.7
1.3
1.25
1.45
1.55
1.65
1.8
80
18
MAX
430
445
-
-
430
-
40
200
10
50
1
40
2.2
2.65
2.75
1.7
1.6
1.7
1.8
2.0
2.3
-
26
UNITS
V
V
V
nC
V
V
µA
µA
µA
µA
mA
mA
V
V
V
V
V
V
V
V
V
Ω
kΩ
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Gate to Emitter Plateau Voltage
Gate Charge
Collector to Emitter Clamp Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Gate to Emitter Threshold Voltage
Collector to Emitter On-State Voltage
Collector to Emitter On-State Voltage
I
C
= 1mA, V
CE
= V
GE
(Figure 12)
I
C
= 10A, V
GE
= 3.7V
(Figures 3 to 9)
I
C
= 6A, V
GE
= 4.0V
(Figures 3 to 9)
I
C
= 10A, V
GE
= 4.5V
(Figures 3 to 9)
I
C
= 14A, V
GE
= 5V
(Figures 3 to 9)
Gate Series Resistance
Gate to Emitter Resistance
©2001 Fairchild Semiconductor Corporation
R
1
R
2
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
HGT1S14N41G3VLS, HGTP14N41G3VL
Electrical Specifications
PARAMETER
Gate to Emitter Leakage Current
Gate to Emitter Breakdown Voltage
Current Turn-On Delay Time -
Resistive Load
Current Turn-On Rise Time -
Resistive Load
Current Turn-Off Time - Inductive Load
Current Turn-Off Time - Resistive Load
Inductive Use Test
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
I
GES
BV
GES
t
d(ON)I
t
rI
t
d(OFF)I
+ t
fI
t
d(OFF)I
+ t
fI
I
SCIS
R
θJC
V
GE
=
±10V
I
GES
=
±5mA
V
DD
= 14V, R
G
= 1kΩ,
V
GE
= 5V (Figure 14)
V
DD
= 14V, R
G
= 1kΩ,
V
GE
= 5V (Figure 14)
I
C
= 11.5A, T
J
= 25
o
C
I
C
= 6.5A, T
J
= 150
o
C
I
C
= 11.5A, T
J
= 25
o
C
I
C
= 6.5A, T
J
= 150
o
C
TEST CONDITIONS
MIN
±384
±12
-
-
-
-
-
-
11.5
15
-
TYP
±555
±14
0.9
0.75
3.2
2.7
9
10
-
-
-
MAX
±1000
-
1.5
1.6
4.5
3.8
20
15
-
-
1.1
UNITS
µA
V
µs
µs
µs
µs
µs
µs
A
A
o
C/W
I
C
= 6.5A, R
G
= 1kΩ, V
GE
= 5V, L = 300µH,
V
DD
= 300V, T
J
= 150
o
C (Figure 14)
I
C
= 6.5A, R
G
= 1kΩ, V
GE
= 5V, R
L
= 46Ω,
V
DD
= 300V, T
J
= 25
o
C (Figure 14)
T
C
= 150
o
C
L = 3mH, V
G
= 5V,
R
G
= 1kΩ (Figures 1, 2)
T
C
= 25
o
C
(Figure 18)
Thermal Resistance
Typical Performance Curves
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
60
Unless Otherwise Specified
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
40
I
SCIS
CAN BE LIMITED BY gfs AT V
GE
= 5V
32
R
G
= 1kΩ, V
GE
= 5V
52
44
36
28
20
12
4
40
80
120
160
200
t
AV
, TIME IN AVALANCHE (µs)
T
J
= 25
o
C
I
SCIS
CAN BE LIMITED BY gfs AT V
GE
= 5V
24
16
T
J
= 25
o
C
8
R
G
= 1kΩ, V
GE
= 5V
0
0
2
4
6
T
J
= 150
o
C
T
J
= 150
o
C
8
10
L, INDUCTANCE (mH)
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs. INDUCTA N C E
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.3
V
GE
= 4.0V
V
GE
= 3.7V
1.2
1.62
I
CE
= 10A
1.58
1.54
V
GE
= 3.7V
1.50
1.46
1.42
1.38
V
GE
= 5.0V
1.34
-50
25
V
GE
= 4.5V
100
175
V
GE
= 4.0V
1.1
V
GE
= 4.5V
V
GE
= 5.0V
I
CE
= 6A
1.0
-50
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
HGT1S14N41G3VLS, HGTP14N41G3VL
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
DUTY CYCLE < 0.5%, T
J
= 175
o
C
PULSE DURATION = 250µs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
V
GE
= 5.0V
DUTY CYCLE < 0.5%, T
J
= 150
o
C
PULSE DURATION = 250µs
V
GE
= 5.0V
30
V
GE
= 4.5V
30
V
GE
= 4.5V
20
V
GE
= 3.7V
10
V
GE
= 4.0V
20
V
GE
= 3.7V
V
GE
= 4.0V
10
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250µs
V
GE
= 5.0V
V
GE
= 4.5V
60
50
40
30
DUTY CYCLE < 0.5%, T
J
= -40
o
C
PULSE DURATION = 250µs
V
GE
= 5.0V
40
V
GE
= 4.5V
30
V
GE
= 3.7V
20
V
GE
= 4.0V
10
V
GE
= 3.7V
20
10
0
V
GE
= 4.0V
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
60
V
GE
50
40
30
20
10
0
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
DUTY CYCLE < 0.5%, V
CE
= 5V
PULSE DURATION = 250µs
32
T
J
= 150
o
C
T
J
= 25
o
C
24
16
8
T
J
= -40
o
C
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 10. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
HGT1S14N41G3VLS, HGTP14N41G3VL
Typical Performance Curves
28
I
CE
, DC COLLECTOR CURRENT (A)
V
GE(TH)
, THRESHOLD VOLTAGE (V)
V
GE
= 5V
24
20
16
12
8
4
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
Unless Otherwise Specified
(Continued)
2.2
I
CE
= 1mA
2.0
1.8
1.6
1.4
1.2
1.0
-50
V
CE
= V
GE
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10000
V
ECS
= 24V
SWITCHING TIME (µs)
1000
16
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1kΩ
14
RESISTIVE t
OFF
12
10
INDUCTIVE t
OFF
8
6
RESISTIVE t
ON
4
2
25
LEAKAGE CURRENTS (µA)
100
V
CES
= 300V
10
V
CES
= 250V
1
0.1
25
50
75
100
125
150
175
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
2400
FREQUENCY = 1MHz
2000
C, CAPACITANCE (pF)
1600
C
IES
1200
800
C
RES
400
0
C
OES
0
5
10
15
20
25
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
I
G(REF)
= 1mA, R
L
= 1.25Ω, T
J
= 25
o
C
6
V
CE
= 12V
4
2
V
CE
= 6V
0
0
8
16
24
32
40
48
56
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
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