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JAN2N1711

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JAN2N1711 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

JAN2N1711 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439171922
Parts packaging codeTO-5
package instructionTO-5, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2023-01-10 13:23:28
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500/225F
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
2N1711
2N1890
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
Z
θ
JX
2N1711
75
2N1890
100
Unit
Vdc
Vdc
mAdc
W
W
0
C
Unit
C/W
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
7.0
500
0.8
3.0
-65 to +200
Max.
58
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 17.2 mW/
0
C for T
C
> 25
0
C
0
TO-5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
µAdc
Collector-Emitter Breakdown Voltage
R
BE
= 10
Ω,
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Emitter-Base Breakdown Voltage
I
E
= 100
µAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
2N1711, S
2N1890, S
2N1711, S
2N1890, S
2N1711, S
2N1890, S
V
(BR)
CBO
75
100
50
80
30
60
7.0
10
10
5.0
Vdc
V
(BR)
CER
Vdc
V
(BR)
CEO
Vdc
V
(BR)
EBO
2N1711
2N1890
I
CBO
I
EBO
Vdc
ηAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JAN2N1711 Related Products

JAN2N1711 LNP4338T1G JANTX2N1890 JANTX2N1711
Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN P & N-Channel 30-V (D-S) MOSFET 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN
Is it lead-free? Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible
Parts packaging code TO-5 - TO-5 TO-5
package instruction TO-5, 3 PIN - TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN
Contacts 3 - 3 3
Reach Compliance Code unknown - unknow unknown
ECCN code EAR99 - EAR99 EAR99
Shell connection COLLECTOR - COLLECTOR COLLECTOR
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V - 60 V 30 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 100 - 100 100
JEDEC-95 code TO-5 - TO-5 TO-5
JESD-30 code O-MBCY-W3 - O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 - e0 e0
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 200 °C - 200 °C 175 °C
Package body material METAL - METAL METAL
Package shape ROUND - ROUND ROUND
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN - NPN NPN
Certification status Qualified - Qualified Qualified
Guideline MIL-19500/225F - MIL-19500/225F MIL-19500/225F
surface mount NO - NO NO
Terminal surface TIN LEAD - Tin/Lead (Sn/Pb) TIN LEAD
Terminal form WIRE - WIRE WIRE
Terminal location BOTTOM - BOTTOM BOTTOM
Transistor component materials SILICON - SILICON SILICON

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