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HER158G R0

Description
Rectifiers 1.5A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER
Categorysemiconductor    Discrete semiconductor   
File Size354KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

HER158G R0 Overview

Rectifiers 1.5A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER

HER158G R0 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
Mounting StyleThrough Hole
Package / CaseDO-15-2
Vr - Reverse Voltage1000 V
If - Forward Current1.5 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1.7 V
Max Surge Current50 A
Ir - Reverse Current5 uA
Recovery Time75 ns
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingReel
Height3.6 mm
Length7.6 mm
ProductRectifiers
Width3.6 mm
Unit Weight0.014991 oz
HER151G - HER158G
CREAT BY ART
1.5A, 50V - 1000V Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ rated VR
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
50
35
60
- 55 to +150
- 55 to +150
1.0
5
150
75
20
HER
50
35
50
HER
100
70
100
HER
200
140
200
HER
300
210
300
1.5
50
1.3
1.7
HER
400
280
400
HER
600
420
600
HER
800
560
800
HER
1000
700
1000
151G 152G 153G 154G 155G 156G 157G 158G
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D0000069
Version: H15

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