RS1DFS - RS1MFS
Taiwan Semiconductor
1A, 200V - 1000V Surface Mount Fast Recovery Rectifier
FEATURES
●
●
●
●
Glass passivated junction chip
Ideal for automated placement
Low profile package
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
1
200 - 1000
30
150
SOD-128
Single die
UNIT
A
V
A
°C
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in
computer,automotive and telecommunication
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: SOD-128
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.027 g (approximately)
SOD-128
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
RS1DFS RS1GFS RS1JFS RS1KFS RS1MFS UNIT
RS1DFS
200
140
RS1GFS
400
280
RS1JFS
600
420
1
30
- 55 to +150
- 55 to +150
RS1KFS RS1MFS
800
560
1000
700
V
V
A
A
°C
°C
1
Version:A1708
RS1DFS - RS1MFS
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
29
84
30
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
I
F
= 0.5A, T
J
= 25°C
Forward voltage per diode
(1)
SYMBOL
TYP
0.94
1.01
MAX
1.10
1.30
1.00
1.20
5
50
-
150
250
500
UNIT
I
F
= 1.0A, T
J
= 25°C
I
F
= 0.5A, T
J
= 125°C
I
F
= 1.0A, T
J
= 125°C
V
F
0.79
0.88
-
V
Reverse current @ rated V
R
per diode
Junction capacitance
(2)
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
I
R
C
J
µA
µA
pF
ns
ns
ns
-
7
-
RS1DFS
RS1GFS
Reverse recovery time
RS1JFS
RS1KFS
RS1MFS
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
F
=0.5A ,I
R
=1.0A
I
RR
=0.25A
t
rr
-
-
ORDERING INFORMATION
PART NO.
RS1xFS
(Note 1, 2)
PART NO.
SUFFIX(*)
H
PACKING
CODE
MW
MX
PACKING CODE
SUFFIX
G
PACKAGE
SOD-128
SOD-128
PACKING
3,500 / 7" Plastic reel
14,000 / 13" Plastic reel
Notes:
1. "xx" defines voltage from 200V (RS1DFS) to 1000V (RS1MFS)
2. Whole series with green compound (halogen-free)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
RS1DFSHMWG
PART NO.
RS1DFS
PART NO.
SUFFIX
H
PACKING
CODE
MW
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:A1708
RS1DFS - RS1MFS
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
1.5
AVERAGE FORWARD CURRENT (A)
100
Fig.2 Typical Junction Capacitance
1
CAPACITANCE (pF)
A
Heat sink
5mm x 5mm
Cu pad test board
10
0.5
1
f=1.0MHz
Vsig=50mVp-p
0.1
75
100
125
150
1
10
REVERSE VOLTAGE (V)
100
0
25
50
LEAD TEMPERATURE (
°
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
10
10 10
Fig.4 Typical Forward Characteristics
1
T
J
=125°C
1
UF1DLW
T
J
=125°C
T
J
=125°C
0.1
1
T
J
=25°C
0.01
Pulse width
0.001
0.1
0.6
0.3
0.7
0.4
0.8
0.5
0.9
0.6
1
0.7
1.1
Pulse width 300μs
duty
1
0.8
1%
0.9
cycle
1.1
1.2
1.3
1.4
1.5
1.6
1.2
0.01
T
J
=25°C
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:A1708
(A)
0.1
T
J
=25°C
RS1DFS - RS1MFS
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOD-128
Unit (mm)
Min
3.60
2.30
1.60
0.90
0.10
0.00
0.30
0.40
4.40
Max
4.00
2.70
1.90
1.10
0.22
0.10
0.60
0.80
5.00
Unit (inch)
Min
0.142
0.091
0.063
0.035
0.004
0.000
0.012
0.016
0.173
Max
0.157
0.106
0.075
0.043
0.009
0.004
0.024
0.031
0.197
DIM
A
B
C
D
E
F
G
H
I
SUGGESTED PAD LAYOUT
DIM
A
B
C
D
Unit (mm)
1.40
3.00
2.10
4.40
Unit (inch)
0.055
0.118
0.082
0.173
MARKING DIAGRAM
P/N
YW
F
4
= Marking Code
= Date Code
= Factory Code
Version:A1708
RS1DFS - RS1MFS
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version:A1708
京公网安备 11010802033920号
EEWORLD
