Preliminary
P521-49
Low Phase Noise LVDS VCXO (27MHz to 65MHz)
FEATURES
•
•
•
•
•
•
•
•
•
•
27MHz to 65MHz Fundamental Mode Crystal.
Output range: 27MHz – 65MHz.
Complementary LVDS outputs.
Selectable OE Logic (enable high or enable low).
Integrated variable capacitors.
High pull linearity: < 5%.
+/- 125 ppm pull range
Supports 2.5V or 3.3V-Power Supply.
Available in die form.
Thickness 10 mil.
DIE CONFIGURATION
57.5 mil
VDDOSC
OSCOFF
OESEL
V
N/C
N/C
(1460,1435)
GNDOSC
VCON
XIN
18
17
16
15
14
13
12
VDDANA
VDDBUF
VDDBUF
PECLBAR
PECL
GNDBUF
19
11
20
10
9
8
56.5 mil
XOUT
OE
21
7
22
1
2
3
4
5
6
GNDOSC
GNDANA
GNDANA
VCON
GNDBUF
Y
(0,0)
DESCRIPTIONS
P521-49 is a VCXO IC specifically designed to pull
high frequency fundamental crystals. Its internal
varicaps allow an on chip frequency pulling,
controlled by the VCON input. The chip provides a
low phase noise, low jitter LVDS differential clock
output.
X
DIE SPECIFICATIONS
Name
Size
Reverse side
Pad dimensions
Thickness
Value
56.5 x 57.5 mil
GND
80 micron x 80 micron
10 mil
BLOCK DIAGRAM
OE
VCON
Oscillator
Amplifier
w/
X+
integrated
varicaps
X-
P521-49
Q
Q
OUTPUT ENABLE LOGIC SELECTION
OESEL
(Pad #14)
0 (Default)
1
OECTRL
(Pad #22)
0
1 (Default)
0 (Default)
1
State
Tri-state
Output enabled
Output enabled
Tri-state
Pad #14, 22: Bond to GND to set to “0”, bond to VDD to set to “1”
No connection results to “default” setting through internal pull-up/-down.
Pad #22: Logical states defined by CMOS V
I H
and V
I L
levels.
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
GNDBUF
Rev 3/02/04 Page 1
Preliminary
P521-49
Low Phase Noise LVDS VCXO (27MHz to 65MHz)
PAD ASSIGNMENT AND DESCRIPTION
Pad #
1
2
3
4
5
6
7
8
9
10
Name
VCON
GNDOSC
GNDANA
GNDANA
GNDBUF
GNDBUF
GNDBUF (optional)
LVDS
LVDSBAR
VDDBUF (optional)
X (µ m)
µ
329.6
498.3
696.2
825.0
973.6
1150.0
1183.6
1183.6
1183.6
1182.4
Y (µ m)
µ
110.1
110.0
110.0
110.0
110.0
109.1
302.2
452.3
613.5
745.9
Description
Control Voltage input. Use this pin to change the
output frequency by varying the applied Control
Voltage.
GND connection for oscillator circuitry.
GND connection for analog circuitry.
GND connection for analog circuitry.
GND connection for output buffer circuitry.
GND connection for output buffer circuitry.
GND connection for output buffer circuitry.
PECL output
PECL complementary output.
VDD connection for output buffer circuitry.
VDDBUF should be separately decoupled from other
VDDs whenever possible.
VDD connection for output buffer circuitry.
VDDBUF should be separately decoupled from other
VDDs whenever possible.
VDD connection for analog circuitry.
VDDANA should be separately decoupled from other
VDDs whenever possible.
Selector input to choose the OE control logic. See
table on page 1.
VDD connection for oscillator circuitry.
VDDOSC should be separately decoupled from other
VDDs whenever possible.
Oscillator Off Selection input pad. When low, turns
off the oscillator when output is disabled. When high
(default), oscillator running when output is disabled.
Internal pull-up
GND connection for oscillator circuitry.
Control Voltage input. Use this pin to change the
output frequency by varying the applied Control
Voltage (internally connected to pad 1).
Crystal oscillator input pad.
Crystal oscillator output pad.
OE input pad. See table on page 1.
11
VDDBUF
1252.4
903.6
12
13
14
15
16
17
18
19
20
21
22
VDDANA
Not used
OESEL
VDDOSC
Not used
OSCOFF
GNDOSC (optional)
VCON
XIN
XOUT
OECTRL
1252.4
1058.5
864.5
624.0
467.1
271.1
109.4
108.9
109.0
108.6
108.6
1081.3
1221.6
1221.6
1222.7
1222.6
1222.6
1222.9
1062.1
865.8
358.4
146.5
Note: for optimal Phase Noise performance, it is recommended to bond all optional VDD and GND pads.
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
Rev 3/02/04 Page 2
Preliminary
P521-49
Low Phase Noise LVDS VCXO (27MHz to 65MHz)
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS
Supply Voltage
Input Voltage, dc
Output Voltage, dc
Storage Temperature
Ambient Operating Temperature
Junction Temperature
Lead Temperature (soldering, 10s)
Input Static Discharge Voltage Protection
SYMBOL
V
DD
V
I
V
O
T
S
T
A
T
J
MIN.
V
SS
-0.5
V
SS
-0.5
-65
0
MAX.
7
V
DD
+0.5
V
DD
+0.5
150
70
125
260
2
UNITS
V
V
V
°C
°C
°C
°C
kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.
2. Crystal Specifications
PARAMETERS
Crystal Resonator Frequency
Crystal Loading Rating
Interelectrode Capacitance
Crystal Pullability
Recommended ESR
SYMBOL
F
XIN
C
L (xtal)
C
0
C
0
/C
1 (xtal)
R
E
AT cut
AT cut
CONDITIONS
Parallel Fundamental Mode
Die at VCON = 1.65V
MIN.
27
TYP.
MAX.
65
UNITS
MHz
pF
7.5
3.5
250
30
pF
-
Ω
3. Voltage Control Crystal Oscillator
PARAMETERS
VCXO Stabilization Time *
VCXO Tuning Range
CLK output pullability
On-chip Varicaps control range
Linearity
VCXO Tuning Characteristic
VCON input impedance
VCON modulation BW
0V
≤
VCON
≤
3.3V, -3dB
25
SYMBOL
T
VCXOSTB
CONDITIONS
From power valid
XTAL C
0
/C
1
< 250
0V
≤
VCON
≤
3.3V
at room temperature
VCON = 0 to 3.3V
MIN.
250*
TYP.
10
MAX.
UNITS
ms
ppm
±80*
4 – 18*
4*
65
60
5*
ppm
pF
%
ppm/V
kΩ
kHz
Note:
Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
Rev 3/02/04 Page 3
Preliminary
P521-49
Low Phase Noise LVDS VCXO (27MHz to 65MHz)
4. General Electrical Specifications
PARAMETERS
Supply Current (Loaded Outputs)
Output valid after OE enabled
Operating Voltage
Output Clock Duty Cycle
Short Circuit Current
V
DD
@ 1.25V (LVDS)
SYMBOL
I
DD
CONDITIONS
at 3.3V @ 61.44MHz
Oscillator off
Oscillator on
MIN.
TYP.
10
MAX.
40
UNITS
mA
ms
V
%
mA
1
2.25
45
50
±50
3.63
55
5. Jitter specifications
PARAMETERS
Period jitter RMS at 61.44MHz
Period jitter peak-to-peak at 61.44MHz
Accumulated jitter RMS at 61.44MHz
Accumulated jitter peak-to-peak at 61.44MHz
Random Jitter
Integrated jitter RMS at 61.44MHz
Measured on Wavecrest SIA 3000
CONDITIONS
At 61.44MHz, with capacitive
decoupling between VDD and GND.
Over 10,000 cycles
At 61.44MHz, with capacitive
decoupling between VDD and GND.
Over 1,000,000 cycles.
“RJ” measured on Wavecrest SIA 3000
Integrated 12 kHz to 20 MHz
MIN.
TYP.
2.5
18.5
2.5
24
2.5
0.6
MAX.
20
UNITS
ps
27
ps
ps
0.75
ps
6. Phase noise specifications
PARAMETERS
Phase Noise
relative to carrier
FREQUENCY
61.44MHz
10Hz
-75
100Hz
-100
1kHz
-125
10kHz
-140
100kHz
-145
1MHz
-150
UNITS
dBc/Hz
Note: Phase Noise measured at VCON = 0V
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
Rev 3/02/04 Page 4
Preliminary
P521-49
Low Phase Noise LVDS VCXO (27MHz to 65MHz)
7. LVDS Electrical Characteristics
PARAMETERS
Output Differential Voltage
V
DD
Magnitude Change
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
SYMBOL
V
OD
∆V
OD
V
OH
V
OL
V
OS
∆V
OS
I
OXD
I
OSD
CONDITIONS
MIN.
247
-50
TYP.
355
MAX.
454
50
UNITS
mV
mV
V
V
V
mV
uA
mA
R
L
= 100
Ω
(see figure)
1.4
0.9
1.125
0
1.1
1.2
3
±1
-5.7
1.6
1.375
25
±10
-8
V
out
= V
DD
or GND
V
DD
= 0V
8. LVDS Switching Characteristics
PARAMETERS
Differential Clock Rise Time
Differential Clock Fall Time
LVDS Levels Test Circuit
OUT
SYMBOL
t
r
t
f
CONDITIONS
R
L
= 100
Ω
C
L
= 10 pF
(see figure)
MIN.
0.2
0.2
TYP.
0.7
0.7
MAX.
1.0
1.0
UNITS
ns
ns
LVDS Switching Test Circuit
OUT
50Ω
C
L
= 10pF
V
OD
V
OS
V
DIFF
R
L
= 100Ω
50Ω
C
L
= 10pF
OUT
OUT
LVDS Transistion Time Waveform
OUT
0V (Differential)
OUT
80%
V
DIFF
20%
0V
80%
20%
t
R
t
F
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
Rev 3/02/04 Page 5
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