PMEG2010AEH
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier in
SOD123F package
Rev. 02 — 26 May 2005
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection encapsulated in a SOD123F small SMD plastic
package.
1.2 Features
s
s
s
s
Forward current: 1 A
Reverse voltage: 20 V
Very low forward voltage
Small and flat lead SMD package
1.3 Applications
s
s
s
s
s
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1:
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
380
Max
1
20
430
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Philips Semiconductors
PMEG2010AEH
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2:
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3:
Ordering information
Package
Name
PMEG2010AEH
-
Description
plastic surface mounted package; 2 leads
Version
SOD123F
Type number
4. Marking
Table 4:
Marking codes
Marking code
AF
Type number
PMEG2010AEH
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.5
t = 8 ms; square
wave
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
−65
−65
Max
20
1
7
9
375
830
150
+150
+150
Unit
V
A
A
A
mW
mW
°C
°C
°C
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9397 750 15079
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2005
2 of 8
Philips Semiconductors
PMEG2010AEH
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1] [2]
[2] [3]
Min
-
-
-
Typ
-
-
-
Max
330
150
60
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determination of the
reverse power losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3]
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.01 A
I
F
= 0.1 A
I
F
= 1 A
I
R
reverse current
V
R
= 5 V
V
R
= 10 V
V
R
= 20 V
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
Typ
200
265
380
15
20
50
55
Max
220
290
430
50
80
200
70
Unit
mV
mV
mV
µA
µA
µA
pF
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 1 V; f = 1 MHz
9397 750 15079
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2005
3 of 8
Philips Semiconductors
PMEG2010AEH
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
10
4
I
F
(mA)
10
3
mdb823
I
R
(mA)
10
2
10
1
(1)
(2)
mdb825
10
2
(1)
(2)
(3)
(4)
10
−1
10
−2
(3)
10
10
−3
10
−4
1
10
−5
10
−1
10
−6
0
5
10
15
V
R
(V)
20
(4)
0
0.1
0.2
0.3
0.4
V
F
(V)
0.5
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mdb824
200
C
d
(pF)
150
100
50
0
0
5
10
15
V
R
(V)
20
T
amb
= 25
°C;
f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
9397 750 15079
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2005
4 of 8
Philips Semiconductors
PMEG2010AEH
20 V, 1 A very low V
F
MEGA Schottky barrier rectifier
8. Package outline
1.7
1.5
1
0.55
0.35
3.6
3.4
2.7
2.5
1.2
1.0
2
0.70
0.55
Dimensions in mm
0.25
0.10
04-11-29
Fig 4. Package outline SOD123F
9. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PMEG2010AEH
[1]
Package
SOD123F
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-115
10000
-135
For further information and the availability of packing methods, see
Section 16.
10. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 5. Reflow soldering footprint
9397 750 15079
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2005
5 of 8
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