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MG150J1JS50

Description
High Power Switching Applications Motor Control Applications
CategoryDiscrete semiconductor    The transistor   
File Size225KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

MG150J1JS50 Overview

High Power Switching Applications Motor Control Applications

MG150J1JS50 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codeunknow
Other featuresHIGH SPEED
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)300 ns
Gate emitter threshold voltage maximum8 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power consumption environment780 W
Maximum power dissipation(Abs)780 W
Certification statusNot Qualified
Maximum rise time (tr)300 ns
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)500 ns
Nominal on time (ton)500 ns
VCEsat-Max2.7 V
MG150J1JS50
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1JS50
High Power Switching Applications
Motor Control Applications
l
The electrodes are isolated from case.
l
High input impedance
l
Includes a complete half bridge in one package.
l
Enhancement-mode
l
High speed : t
f
= 0.30 µs (max) (I
C
= 150 A)
t
rr
= 0.15 µs (max) (I
F
= 150 A)
l
Low saturation voltage
: V
CE (sat)
= 2.70 V (max) (I
C
= 150 A)
Unit: mm
Equivalent Circuit
E
1
/C
2
C
1
E
2
JEDEC
JEITA
2-95A2A
G
1
E
1
TOSHIBA
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
V
R
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
Rating
600
±20
600
150
300
150
300
780
150
−40
to 125
2500
(AC 1 min.)
3/3
Unit
V
V
V
A
Forward current
A
W
°C
°C
V
N·m
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal/mounting)
1
2002-11-21

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