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OM5209SC

Description
15 A, SILICON, RECTIFIER DIODE, MO-078AA
Categorysemiconductor    Discrete semiconductor   
File Size16KB,2 Pages
ManufacturerETC
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OM5209SC Overview

15 A, SILICON, RECTIFIER DIODE, MO-078AA

OM5209SC OM5211SC OM5213SC
OM5210SC OM5212SC
DUAL HIGH EFFICIENCY RECTIFIERS IN
HERMETIC MO-078AA PACKAGE
15 Amp, 50 To 400 Volts, 35 To 50 ns trr
FEATURES
Very Low Forward Voltage
Very Fast Switching Time
Hermetic 5-Pin Metal Package, JEDEC MO-078AA Outline
Low Thermal Resistance
Isolated Package
High Surge
Two Uncommitted Rectifiers
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. This series combines two
uncommitted high efficiency devices into one package, simplifying installation,
reducing heat sink hardware, and the need to obtain matched components. These
devices are ideally suited for demanding applications where small size and a
hermetically sealed package are required.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 400 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . 15 A
Non-Repetitive Sinusoidal Surge Current 8.3 ms . . . . . . . . . . . . . . . . . . . . . . . . 150 A
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . - 55° C to +150° C
Z
3.2
SCHEMATIC
CONNECTION DIAGRAM
1
2
5
4
1 2 3 4 5
4 11 R4
Supersedes 1 07 R3
3.2 - 49

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OM5209SC OM5211SC OM5212SC OM5213SC OM5210SC
Description 15 A, SILICON, RECTIFIER DIODE, MO-078AA 15 A, SILICON, RECTIFIER DIODE, MO-078AA 15 A, SILICON, RECTIFIER DIODE, MO-078AA 15 A, SILICON, RECTIFIER DIODE, MO-078AA 15 A, SILICON, RECTIFIER DIODE, MO-078AA
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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