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BZX84C6V8

Description
6.8 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size188KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BZX84C6V8 Overview

6.8 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZX84C6V8 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompli
ECCN codeEAR99
Samacsys DescriptiBZX84C6V8, Zener Diode, 6.8V ±5 350 mW 2µA, 3-Pin SOT-23
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance15 Ω
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
Certification statusNot Qualified
Nominal reference voltage6.8 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
BZX84C 4V7 - BZX84C 33 Series
BZX84C 3V3 - BZX84C 33 Series Zeners
Tolerance: C = 5%
Absolute Maximum Ratings*
Parameter
Storage Temperature Range
Maximum Junction Operating Temperature
Total Device Dissipation
Derate above 25°C
Repetitive Peak Forward Current (I
FRM
)
Repetitive Peak Working Current (I
ZRM
)
TA = 25°C unless otherwise noted
Value
-55 to +150
+ 150
350
1.8
250
250
Units
°C
°C
mW
mW/°C
mA
mA
3
2
1
SOT-23
CONNECTION
DIAGRAM
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
3
1
2 NC
Electrical Characteristics
I
ZT
= 5.0 mA
TA = 25°C unless otherwise noted
I
ZT
= 1.0 mA
I
ZT
= 20 mA
Device
BZX84C 3V3
BZX84C 3V6
BZX84C 3V9
BZX84C 4V3
BZX84C 4V7
BZX84C 5V1
BZX84C 5V6
BZX84C 6V2
BZX84C 6V8
BZX84C 7V5
BZX84C 8V2
BZX84C 9V1
BZX84C 10
BZX84C 11
BZX84C 12
BZX84C 13
BZX84C 15
BZX84C 16
BZX84C 18
BZX84C 20
BZX84C 22
BZX84C 24
Mark
Z14
Z15
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
MIN
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
V
Z
(V)
MAX
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
Z
Z
(Ω)
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
V
Z
(V)
MAX
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.0
15.5
17
19
21.1
23.2
25.5
Z
Z
(Ω)
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
MIN
3.6
3.9
4.1
4.4
4.5
5.0
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
V
Z
(V)
MAX
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8.0
8.8
9.7
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Z
Z
(Ω)
40
40
30
30
15
15
10
6
6
6
6
8
10
10
10
15
20
20
20
20
25
25
NOTE:
National preferred devices in
BOLD
©1997
Fairchild Semiconductor Corporation
BZX84 Series Rev. A
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