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BZX79C3V9

Description
3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BZX79C3V9 Overview

3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

BZX79C3V9 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation0.5 W
Nominal reference voltage3.9 V
surface mountNO
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1
BZX79C Series
V
Z
:
2.4 to 75V
P
D
:
500mW
FEATURES :
• Higher zener voltages available on request.
• Standard zener voltage tolerance is
±
5%
• Other tolerances are available upon request.
• Pb / RoHS Free
ZENER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
0.020 (0.52)max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current see Table "Characteristics"
Forward Voltage at I
F
= 10 mA.
Power Dissipation at T
L
= 25°C
Thermal Resistance Junction to Ambient Air
Continuous Forward Current
Peak reverse power dissipation (non-repetitive)
tp = 100µs square wave
Junction temperature
Storage temperature range
T
J
T
S
-65 to + 200
-65 to + 200
°C
°C
V
F
P
D
R
θ
JA
I
F
P
ZSM
0.9
500
(1)
300
(1)
Symbol
Value
Unit
V
mW
°C/W
mA
W
250
40
Note:
(1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Page 1 of 2
Rev. 02 : March 25, 2005
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