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1N5443C

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 10pF C(T), 30V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size60KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5443C Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 10pF C(T), 30V, Silicon, Abrupt,

1N5443C Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresGOOD Q
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.6
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor400
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
Base Number Matches1
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