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Datasheet> All Categories > Discrete semiconductor> diode> BZX55C47
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BZX55C47

Description
47 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size140KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BZX55C47 Overview

47 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZX55C47 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDO-35
package instructionGLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance110 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT APPLICABLE
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage47 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT APPLICABLE
Maximum voltage tolerance5%
Working test current2.5 mA

Preview

Download Datasheet
BZX55C2V4 - BZX55C91 Zeners
BZX55C2V4 - BZX55C91
Zeners
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings *
Symbol
P
D
T
a
= 25°C unless otherwise noted
Parameter
Power Dissipation
@ TL
≤
75°C, Lead Length = 3/8”
Derate above 75°C
Operating and Storage Temperature Range
Value
500
4.0
-65 to +200
Units
mW
mW/°C
°C
T
J
, T
STG
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Electrical Characteristics
Device
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
T
a
= 25°C unless otherwise noted
V
Z
(V) @ I
Z
Min.
2.28
2.50
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.5
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
(Note 1)
Max.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
Z
Z
@ I
Z
(Ω)
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
Test Current
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
R
(µA) @ V
R
T
a
= 25°C T
a
= 125°C
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1
1
1
1
1
1
1
1
1
1
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
I
ZM
(mA)
(Note 2)
100
50
40
40
40
40
40
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
155
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BZX55C2V4 - BZX55C91 Rev. C1

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