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BZX55C3V3

Description
3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size140KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BZX55C3V3 Overview

3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

BZX55C3V3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance85 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT APPLICABLE
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.3 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT APPLICABLE
Maximum voltage tolerance5%
Working test current5 mA
BZX55C2V4 - BZX55C91 Zeners
BZX55C2V4 - BZX55C91
Zeners
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings *
Symbol
P
D
T
a
= 25°C unless otherwise noted
Parameter
Power Dissipation
@ TL
75°C, Lead Length = 3/8”
Derate above 75°C
Operating and Storage Temperature Range
Value
500
4.0
-65 to +200
Units
mW
mW/°C
°C
T
J
, T
STG
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Electrical Characteristics
Device
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
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BZX55C5V6
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BZX55C9V1
BZX55C10
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BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
T
a
= 25°C unless otherwise noted
V
Z
(V) @ I
Z
Min.
2.28
2.50
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.5
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
(Note 1)
Max.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
Z
Z
@ I
Z
(Ω)
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
Test Current
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
R
(µA) @ V
R
T
a
= 25°C T
a
= 125°C
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1
1
1
1
1
1
1
1
1
1
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
I
ZM
(mA)
(Note 2)
100
50
40
40
40
40
40
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
155
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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