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BZW50-39B

Description
5000 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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BZW50-39B Overview

5000 W, BIDIRECTIONAL, SILICON, TVS DIODE

BZW50-39B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
BZW50 Series
Stand-off Zener Voltage: 10 - 180 Volts
Peak Power: 5000 Watts
FEATURES :
* 5000W (10/1000µs) Peak Pulse Power
* Excellent clamping capability
* Low incremental surge resistance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Pb / RoHS Free
TRANSIENT VOLTAGE
SUPPRESSOR
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA
* Case : Molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak pulse power dissipation
(1)
, T
J
initial = Ta
Power dissipation on infinite heat sink , Ta = 75ºC
Non repetitive surge peak forward current
for unidirectional type , tp = 10 ms ,T
J
initial = Ta
Maximum lead temperature for soldering during 10s
at 5mm from case
Thermal resistance junction to lead
Thermal resistance junction to ambient, L = 10mm
Operating and storage temperature range
Symbol
P
PK
P
D
I
FSM
Value
5000
6.5
500
Unit
W
W
A
T
L
R
θJL
R
θJA
T
J
, T
STG
230
15
65
- 65 to + 175
ºC
ºC/W
ºC/W
°C
Note:
(1) For surge greater than the maximum values, the diode will fail in short-circuit.
Page 1 of 3
Rev. 02 : March 25, 2005
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