BZW06P171B datasheet, PDF - EEWORLD Datasheet

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BZW06P171B: Description600 W, BIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size41KB，4 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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BZW06P171B Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE

BZW06P171B Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli
ECCN code	EAR99

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BZW06-5V8B SERIES

: 6.8 - 440 Volts

: 600 Watts

FEATURES :

* 600W surge capability at 1ms

* Excellent clamping capability

* Low zener impedance

* Fast response time : typically less

then 1.0 ps from 0 volt to V

BR(min)

* Typical I

less then 1µA above 10V

* Pb / RoHS Free

BIDIRECTIONAL TRANSIENT

SUPPRESSOR

0.161 (4.1)

0.154 (3.9)

1.00 (25.4)

MIN.

0.284 (7.2)

0.268 (6.8)

MECHANICAL DATA

* Case : D2 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Mounting position : Any

* Weight : 0.465 gram

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

DEVICES FOR BIPOLAR APPLICATIONS

For uni-directional without B suffix

Electrical characteristics apply in both directions

MAXIMUM RATINGS

Rating at 25

C ambient temperature unless otherwise specified.

Rating

Peak Pulse Power for 1 msec. Exponential Pulse

Steady State Power Dissipation ( L=10mm )

Storage Temperature Range

Symbol

STG

Value

Minimum 600

5.0

- 65 to + 175

Unit

Watt

°C

Notes :

(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25

°C

per Fig. 1

(2) Mounted on Copper Leaf area of 1.57 in

(40mm

(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.

Page 1 of 4

Rev. 04 : August 29, 2005

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