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BZW04-188

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size110KB,3 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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BZW04-188 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZW04-188 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
Parts packaging codeDO-15
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage231 V
Minimum breakdown voltage209 V
Breakdown voltage nominal value220 V
Shell connectionISOLATED
Maximum clamping voltage301 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AC
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage188 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BZW04-5V8 ... BZW04-376B
BZW04-5V8 ... BZW04-376B
Unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden
Version 2005-07-15
Peak pulse power dissipation
Impuls-Verlustleistung
Ø
3
±0.05
400 W
5.8...376 V
DO-15
(DO-204AC)
0.4 g
Nominal Stand-off voltage
Nominale Sperrspannung
Plastic case
Kunststoffgehäuse
Weight approx
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
±0.5
Type
62.5
Ø
0.8
±0.05
Dimensions - Maße [mm]
For bidirectional types (add suffix “B”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “B”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
I
F
= 25 A
T
A
= 25°C
T
A
= 75°C
T
A
= 25°C
V
BR
200 V
V
BR
> 200 V
6.3
±0.1
Grenz- und Kennwerte
P
PPM
P
M(AV)
I
FSM
V
F
V
F
T
j
T
S
R
thA
R
thT
400 W
1
)
1 W
2
)
40 A
3
)
< 3.0 V
3
)
< 6.5 V
3
)
-50...+175°C
-50...+175°C
< 45 K/W
< 15 K/W
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
1
2
3
Non-repetitive pulse see curve I
PP
= f (t) / P
PP
= f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP
= f (t) / P
PP
= f (t)
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Unidirectional diodes only – Nur für unidirektionale Dioden
http://www.diotec.com/
© Diotec Semiconductor AG
1

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