BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
500mW, 2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
Mini-MELF (LL34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: Mini-MELF Package (JEDEC DO-213AC)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
- Weight : 31 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Storage Temperature Range
Note1 : Valid provided that electrodes are kept at ambient temperature
I
F
= 100 mA
(Note 1)
SYMBOL
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
300
- 65 to + 175
UNIT
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1403001
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics (Ratings at T
A
=25
o
C ambient temperature unless otherwise specified)
V
F
Forward Voltage = 1.0V Maximum @ I
F
= 100 mA for all part numbers
V
Z
@ I
ZT
Part Number
Min
BZV55B2V4
BZV55B2V7
BZV55B3V0
BZV55B3V3
BZV55B3V6
BZV55B3V9
BZV55B4V3
BZV55B4V7
BZV55B5V1
BZV55B5V6
BZV55B6V2
BZV55B6V8
BZV55B7V5
BZV55B8V2
BZV55B9V1
BZV55B10
BZV55B11
BZV55B12
BZV55B13
BZV55B15
BZV55B16
BZV55B18
BZV55B20
BZV55B22
BZV55B24
BZV55B27
BZV55B30
BZV55B33
BZV55B36
BZV55B39
BZV55B43
BZV55B47
BZV55B51
BZV55B56
BZV55B62
BZV55B68
BZV55B75
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
(Volt)
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Z
ZT
@ I
ZT
(Ω)
Max
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
I
R
@ V
R
(μA)
Max
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
Notes: 1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest
Taiwan Semiconductor
representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current (I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
Document Number: DS_S1403001
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES (BZV55B2V4 ~ BZV55B75)
(TA=25℃ unless otherwise noted)
Fig. 1 Power Dissipation VS. Ambient Temperature
600
500
P
D
-Power DIssipation (mW)
Total Capacitance (pF)
400
300
200
100
V
R
=20V
0
0
40
80
120
160
200
Temperature (
o
C)
1
0
20
40
V
Z
- Reverse Voltage (V)
60
80
V
R
=25V
100
V
R
=2V
V
R
=5V
1000
f=1MHz
T
A
=25
o
C
Fig. 2 Total Capacitance
10
Fig. 3 Differential Impedance VS. Zener Voltage
1000
Differential Zener Impedance(Ohm)
T
A
=25
o
C
Forward Current (mA)
100
1000
Fig. 4 Forward Current VS. Forward Voltage
100
I
Z
=2mA
I
Z
=5mA
10
I
Z
=10mA
1
10
1
0
1
10
V
Z
- Reverse Voltage (V)
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
- Forward Voltage (mV)
Fig. 5 Reverse Current VS. Reverse Voltage
300
250
Reverse Current (mA)
200
150
100
50
0
0
2
4
6
8
10
V
Z
- Reverse Voltage (V)
0.01
15
Reverse Current (mA)
10
100
Fig. 6 Reverse Current VS. Reverse Voltage
1
0.1
25
35
45
55
65
75
85
V
Z
- Reverse Voltage (V)
Document Number: DS_S1403001
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
BZV55Bxxx
(Note1)
MANUFACTURE
CODE
(Note 2)
PACKING CODE
L0
L1
GREEN COMPOUND
CODE
G
G
PACKAGE
Mini-MELF (Glass Seal)
Mini-MELF (Glass Seal)
PACKING
10K / 13" Reel
2.5K / 7" Reel
Note 1 : "xxx" is Device Code from "2V4" thru "75".
Note 2 : Manufacture special control, if empty means no special control requirement.
EXAMPLE
PREFERRED P/N
BZV55B2V4 L0G
BZV55B2V4-L0 L0G
BZV55B2V4-B0 L0G
PART NO.
BZV55B2V4
BZV55B2V4
BZV55B2V4
L0
B0
MANUFACTURE
CODE
PACKING CODE
L0
L0
L0
GREEN COMPOUND
CODE
G
G
G
DESCRIPTION
Green compound
Green compound
Green compound
Document Number: DS_S1403001
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
C
DIM.
A
B
Unit (mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
B
C
A
SUGGESTED PAD LATOUT
DIM.
A
B
C
D
Unit(mm)
Typ.
1.25
2.00
2.50
5.00
Unit(inch)
Typ.
0.049
0.079
0.098
0.197
Document Number: DS_S1403001
Version: E14
Embedded System
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