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MA4Z159

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size46KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA4Z159 Overview

Silicon epitaxial planar type

MA4Z159 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSC-82
package instructionR-PDSO-F4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Maximum diode capacitance2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F4
Number of components2
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
Switching Diodes
MA4Z159
(MA4S159)
Silicon epitaxial planar type
Unit: mm
For switching circuits
s
Features
Small S-mini type 4-pin package
Two isolated elements contained in one package, allowing high-
density mounting
Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
Short reverse recovery time t
rr
Small terminal capacitance, C
t
2.1
±0.1
1.3
±0.1
4
0.7
±0.1
3
1.25
±0.1
2.1
±0.1
1
2
0.16
+0.1
–0.06
0.3
±0.05
0 to 0.1
s
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward
current
Peak forward
current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) *: t = 1 s
Single
Double
Single
Double
Single
Double
T
j
T
stg
I
FSM
I
FM
Symbol
V
R
V
RM
I
F(AV)
Rating
80
80
100
75
225
170
500
375
150
−55
to
+150
°C
°C
2
mA
1
mA
Unit
V
V
mA
1: Anode 1
2: Anode 2
EIAJ: SC-82
(0.425)
3: Cathode 2
4: Cathode 1
SMini4-F1 Package
Marking Symbol: M1B
Internal Connection
4
3
s
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100
80
0.9
2
3
0.95
Conditions
Min
Typ
Max
0.1
1.2
Unit
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. *: t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Publication date: May 2002
W.F.Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKF00049AED
(0.15)
1

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