®
BUV98AV
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
EBO
I
C
I
B
I
CM
I
BM
P
tot
V
isol
T
stg
T
j
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
b
O
so
te
le
r
P
uc
od
s)
t(
bs
-O
INTERNAL SCHEMATIC DIAGRAM
et
l
o
P
e
od
r
s)
t(
uc
Parameter
Value
1000
450
7
30
60
8
16
150
2500
-55 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o
o
Collector-Emitter Voltage (V
BE
= -5 V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 10 ms)
Base Current
Base Peak Current (t
p
< 10 ms)
Total Dissipation at T
c
= 25 C
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
o
C
C
March 2003
1/7
BUV98AV
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.83
0.05
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -5V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25 mH
V
clamp
= 450 V
I
C
= 24 A
I
C
= 16 A
I
C
= 24 A
I
C
= 16 A
V
CE
= 5 V
I
B
= 3.2 A
I
B
= 5 A
I
B
= 3.2 A
t
p
= 3
µs
450
T
j
= 100
o
C
T
j
= 100 C
o
Min.
Typ.
Max.
1
8
0.4
4
2
Unit
mA
mA
mA
mA
mA
V
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
h
FE
∗
V
CE(sat)
∗
V
BE(sat)
∗
di
C
/dt
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
9
V
CC
= 300 V R
C
= 0
I
B1
= 6 A T
j
= 100
o
C
V
CE
(3
µs)
Collector-Emitter
Dynamic Voltage
V
CE
(5
µs)
Collector-Emitter
Dynamic Voltage
t
s
t
f
Storage Time
Fall Time
V
CC
= 300 V R
C
= 15
Ω
I
B1
= 6 A T
j
= 100
o
C
V
CC
= 300 V R
C
= 15
Ω
I
B1
= 6 A T
j
= 100
o
C
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
O
so
b
te
le
r
P
uc
od
I
C
= 16 A
V
CC
= 50 V
L
B
= 1.5
µH
V
BB
= -5 V
V
clamp
= 300 V I
B1
= 3.2 A
L = 750
µH
T
j
= 100
o
C
I
CWoff
= 30 A
V
BB
= -5 V
L = 750
µH
T
j
= 125
o
C
s)
t(
so
b
-O
I
B1
= 6 A
V
CC
= 50 V
L
B
= 15
µH
te
le
100
r
P
od
s)
t(
uc
1.5
5
V
V
1.6
V
A/µs
8
4
5
0.4
V
V
µs
µs
350
V
2/7
BUV98AV
Safe Operating Area
Thermal Impedance
Derating Curve
Collector-Emitter Voltage Versus
Base-Emitter Resistance
Collector- Emitter Saturation Voltage
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Base-Emitter Saturation Voltage
3/7
BUV98AV
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Switching Times Inductive Load Versus
Temperature
4/7
BUV98AV
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronics switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Turn-off Switching Waveforms
(1) Fast electronic switch
(3) Fast recovery rectifier
(2) Non-inductive load
5/7
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