®
BUV26
MEDIUM POWER NPN SILICON TRANSISTOR
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
FAST SWITCHING SPEED
LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
s
SWITCHING REGULATORS
s
MOTOR CONTROL
DESCRIPTION
The BUV26 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
P
tot
T
stg
T
j
Parameter
Collector-base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Emitter Current
Collector Peak Current (t
p
<10ms)
Base Current
Base Peak Current (t
p
<10ms)
Total Dissipation at T
c
< 25 C
Total Dissipation at T
c
< 60 C
Storage Temperature
Max. Operating Junction Temperature
o
o
Value
180
90
7
14
25
4
6
85
65
-65 to +175
175
Unit
V
V
V
A
A
A
A
W
W
o
o
C
C
February 2003
1/4
BUV26
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.76
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEX
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 50Ω)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off
Current (I
C
= 0)
Test Conditions
V
CE
= 180V
V
CE
= 180V
V
EB
= 5 V
I
C
= 0.2 A
L = 25mH
90
T
c
= 125
o
C
T
c
= 125
o
C
Min.
Typ.
Max.
3
1
1
Unit
mA
mA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
V
BE(sat)
∗
Emitter-Base
Voltage (I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
INDUCTIVE LOAD
Storage time
Fall Time
Storage Time
Fall Time
I
E
= 50mA
I
C
= 6A
I
C
= 12A
I
C
=12A
I
B
= 0.6A
I
B
= 1.2A
I
B
= 1.2A
7
30
0.6
1.5
2
V
V
V
V
t
on
t
s
t
f
t
s
t
f
t
s
t
f
V
CC
= 50V
V
BE
= - 6V
R
BB
= 2.5Ω
V
CC
=
V
BE
=
L
B
= -
V
CC
=
V
BE
=
L
B
= -
50V
- 5V
0.5µH
50V
- 5V
0.5µH
I
C
=12A
I
B1
= 1.2A
0.4
0.45
0.12
0.5
0.04
0.6
1
0.25
ms
µs
µs
µs
µs
I
C
= 12A
I
B1
= 1.2A
I
C
= 12 A
I
B1
= 1.2A
o
T
c
= 125 C
2
0.15
µs
µs
∗
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/4
BUV26
TO-220 MECHANICAL DATA
DIM.
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
DIA.
3.75
13.00
2.65
15.25
6.20
3.50
2.60
3.85
0.147
mm
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10.00
16.40
14.00
2.95
15.75
6.60
3.93
0.511
0.104
0.600
0.244
0.137
0.102
0.151
TYP.
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
0.645
0.551
0.116
0.620
0.260
0.154
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
P011CI
3/4
BUV26
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4
京公网安备 11010802033920号
EEWORLD
