®
BUTW92
HIGH CURRENT NPN SILICON TRANSISTOR
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
APPLICATIONS:
s
MOTOR CONTROL
s
HIGH FREQUENCY AND EFFICIENCY
CONVERTERS
3
DESCRIPTION
High current, high speed transistor suited for
power conversion applications, high efficency
converters and motor controls.
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
E
I
EM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Emitter-Current
Emitter Peak Current (t
p
< 5ms)
Base Current
Base Peak Current (t
p
< 5ms)
Total Dissipation at T
c
≤
25 C
o
Value
500
250
7
60
70
15
18
180
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
Storage Temperature
Max. Operating Junction Temperature
C
C
September 2001
1/4
BUTW92
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
MAX
0.7
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
EBO
V
CES
V
EBO
Parameter
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Voltage (V
EB
=0)
Emitter-Base Voltage
(I
C
= 0)
Test Conditions
V
CE
= 450 V
V
CE
= 450 V
V
EB
= 5 V
I
C
= 5 mA
I
E
= 50 mA
I
C
= 200 mA
500
7
250
T
C
= 100 C
o
Min.
Typ.
Max.
50
1
50
Unit
µA
mA
µA
V
V
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
=0)
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= 60 A
I
C
= 60 A
I
C
= 60 A
I
C
= 60 A
I
C
= 60 A
I
C
= 60 A
I
C
= 5 A
I
B
= 15 A
I
B
= 15 A
I
B
= 15 A
I
B
= 15 A
T
C
= 100
o
C
T
C
= 100
o
C
9
6
0.8
1.1
1
1.5
1.9
2
V
V
V
V
V
CE
= 3 V
o
V
CE
= 3 V T
C
= 100 C
V
CE
= 3 V
65
1.2
250
1.4
300
µs
ns
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 50 A
V
CC
= 250 V
I
B1
= -I
B2
= 10 A
* Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
2/4
BUTW92
TO-247 MECHANICAL DATA
mm
MIN.
A
D
E
F
F3
F4
G
H
L
L3
L4
L5
M
2
15.3
19.7
14.2
34.6
5.5
3
0.079
4.7
2.2
0.4
1
2
3
10.9
15.9
20.3
14.8
0.602
0.776
0.559
1.362
0.217
0.118
TYP.
MAX.
5.3
2.6
0.8
1.4
2.4
3.4
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
0.429
0.626
0.779
0.582
inch
TYP.
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
DIM.
P025P
3/4
BUTW92
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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