®
BUF
634
BUF634
BUF
634
BUF
634
BUF
634
250mA HIGH-SPEED BUFFER
FEATURES
q
HIGH OUTPUT CURRENT: 250mA
q
SLEW RATE: 2000V/
µ
s
q
PIN-SELECTED BANDWIDTH:
30MHz to 180MHz
q
LOW QUIESCENT CURRENT:
1.5mA (30MHz BW)
q
WIDE SUPPLY RANGE:
±
2.25 to
±
18V
q
INTERNAL CURRENT LIMIT
q
THERMAL SHUTDOWN PROTECTION
q
8-PIN DIP, SO-8, 5-LEAD TO-220, 5-LEAD
DDPAK SURFACE-MOUNT
APPLICATIONS
q
VALVE DRIVER
q
SOLENOID DRIVER
q
OP AMP CURRENT BOOSTER
q
LINE DRIVER
q
HEADPHONE DRIVER
q
VIDEO DRIVER
q
MOTOR DRIVER
q
TEST EQUIPMENT
q
ATE PIN DRIVER
DESCRIPTION
The BUF634 is a high speed unity-gain open-loop
buffer recommended for a wide range of applications.
It can be used inside the feedback loop of op amps to
increase output current, eliminate thermal feedback
and improve capacitive load drive.
For low power applications, the BUF634 operates
on 1.5mA quiescent current with 250mA output,
2000V/µs slew rate and 30MHz bandwidth. Band-
width can be adjusted from 30MHz to 180MHz by
connecting a resistor between V– and the BW Pin.
Output circuitry is fully protected by internal current
limit and thermal shut-down making it rugged and
easy to use.
8-Pin DIP Package
SO-8 Surface-Mount Package
1
2
3
4
G=1
8
7
6
5
The BUF634 is available in a variety of packages to
suit mechanical and power dissipation requirements.
Types include 8-pin DIP, SO-8 surface-mount, 5-lead
TO-220, and a 5-lead DDPAK surface-mount plastic
power package.
5-Lead
TO-220
5-Lead DDPAK
Surface Mount
G=1
G=1
1 2 3 4 5
1 2 3 4 5
BW
NC
V
IN
V–
NC
V+
V
O
NC
BW V–
V+
V
IN
V
O
BW V–
V+
V
IN
V
O
NOTE: Tabs are connected
to V– supply.
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©
1993 Burr-Brown Corporation
PDS-1206C
Printed in U.S.A. June, 1996
SBOS030
SPECIFICATIONS
ELECTRICAL
At T
A
= +25°C
(1)
, V
S
=
±15V,
unless otherwise noted.
BUF634P, U, T, F
LOW QUIESCENT CURRENT MODE
PARAMETER
INPUT
Offset Voltage
vs Temperature
vs Power Supply
Input Bias Current
Input Impedance
Noise Voltage
GAIN
CONDITION
MIN
TYP
±30
±100
0.1
±0.5
80 || 8
4
0.95
0.85
0.8
0.99
0.93
0.9
±250
(V+) –1.7
(V–) +1.8
(V+) –2.4
(V– ) +3.5
(V+) –2.8
(V–) +4
±350
R
L
= 1kΩ
R
L
= 100Ω
20Vp-p, R
L
= 100Ω
20V Step, R
L
= 100Ω
20V Step, R
L
= 100Ω
3.58MHz, V
O
= 0.7V, R
L
= 150Ω
3.58MHz, V
O
= 0.7V, R
L
= 150Ω
30
20
2000
200
50
4
2.5
±15
±1.5
±550
MAX
±100
1
±2
WIDE BANDWIDTH MODE
MIN
TYP
T
T
T
±5
8 || 8
T
T
T
T
T
T
T
T
T
T
T
T
T
T
±400
180
160
T
T
T
0.4
0.1
T
±18
±2
+85
+125
+125
175
100
150
65
6
65
6
T
±15
T
T
T
T
T
T
T
T
T
T
V+
MAX
T
T
±20
UNITS
mV
µV/°C
mV/V
µA
MΩ || pF
nV/√Hz
V/V
V/V
V/V
mA
V
V
V
V
V
V
Specified Temperature Range
V
S
=
±2.25V
(2)
to
±18V
V
IN
= 0V
R
L
= 100Ω
f = 10kHz
R
L
= 1kΩ, V
O
=
±10V
R
L
= 100Ω, V
O
=
±10V
R
L
= 67Ω, V
O
=
±10V
OUTPUT
Current Output, Continuous
Voltage Output, Positive
Negative
Positive
Negative
Positive
Negative
Short-Circuit Current
DYNAMIC RESPONSE
Bandwidth, –3dB
Slew Rate
Settling Time, 0.1%
1%
Differential Gain
Differential Phase
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Quiescent Current, I
Q
TEMPERATURE RANGE
Specification
Operating
Storage
Thermal Shutdown
Temperature, T
J
Thermal Resistance,
θ
JA
θ
JA
θ
JA
θ
JC
θ
JA
θ
JC
I
O
= 10mA
I
O
= –10mA
I
O
= 100mA
I
O
= –100mA
I
O
= 150mA
I
O
= –150mA
(V+) –2.1
(V–) +2.1
(V+) –3
(V–) +4
(V+) –4
(V–) +5
T
T
T
T
T
T
T
mA
MHz
MHz
V/µs
ns
ns
%
°
V
V
mA
°C
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
±2.25
(2)
I
O
= 0
–40
–40
–55
T
±20
T
T
T
“P” Package
(3)
“U” Package
(3)
“T” Package
(3)
“T” Package
“F” Package
(3)
“F” Package
V+
V
IN
V
O
V
IN
BW
V
O
V–
T
Specifications the same as Low Quiescent Mode.
V–
NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this product will
cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply
voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
®
BUF634
2
PIN CONFIGURATION
Top View
8-Pin Dip Package
SO-8 Surface-Mount Package
Top View
5-Lead
TO-220
BW
NC
V
IN
V–
1
2
3
4
G=1
8
7
6
5
NC
V+
G=1
G=1
5-Lead DDPAK
Surface Mount
V
O
NC
NC = No Connection
BW V–
V+
V
IN
V
O
1 2 3 4 5
1 2 3 4 5
ABSOLUTE MAXIMUM RATINGS
Supply Voltage .....................................................................................
±18V
Input Voltage Range ...............................................................................
±V
S
Output Short-Circuit (to ground) ................................................. Continuous
Operating Temperature ..................................................... –40°C to +125°C
Storage Temperature ........................................................ –55°C to +125°C
Junction Temperature ....................................................................... +150°C
Lead Temperature (soldering,10s) .................................................... +300°C
BW V–
V+
V
IN
V
O
NOTE: Tab electrically
connected to V–.
PACKAGE/ORDERING INFORMATION
PACKAGE
DRAWING
NUMBER
(1)
006
182
315
325
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
ELECTROSTATIC
DISCHARGE SENSITIVITY
Any integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
PRODUCT
BUF634P
BUF634U
BUF634T
BUF634F
PACKAGE
8-Pin Plastic DIP
SO-8 Surface-Mount
5-Lead TO-220
5-Lead DDPAK
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
®
3
BUF634
TYPICAL PERFORMANCE CURVES
At T
A
= +25°C, V
S
=
±15V,
unless otherwise noted.
GAIN and PHASE vs FREQUENCY
vs QUIESCENT CURRENT
10
R
L
= 100Ω
5
R
S
= 50Ω
V
O
= 10mV 0
–5
–10
0
–10
I
Q
= 15mA
I
Q
= 9mA
I
Q
= 4mA
I
Q
= 2.5mA
I
Q
= 1.5mA
1M
10M
100M
Frequency (Hz)
1G
–15
GAIN and PHASE vs FREQUENCY
vs TEMPERATURE
R
L
= 100Ω
R
S
= 50Ω
V
O
= 10mV
Low I
Q
Wide BW
10
5
0
–5
–10
0
–10
Wide BW
–15
Phase (°)
Gain (dB)
–20
–30
–40
–50
Phase (°)
–20
–30
–40
–50
1M
Low I
Q
T
J
= –40°C
T
J
= 25°C
T
J
= 125°C
10M
100M
Frequency (Hz)
1G
GAIN and PHASE vs FREQUENCY
vs SOURCE RESISTANCE
10
R
L
= 100Ω
V
O
= 10mV 5
0
Wide BW
Low I
Q
0
–10
–5
–10
–15
0
–10
GAIN and PHASE vs FREQUENCY
vs LOAD RESISTANCE
R
S
= 50Ω
V
O
= 10mV
Wide BW
Low I
Q
10
5
0
–5
–10
–15
Wide BW
Low I
Q
R
L
= 1kΩ
R
L
= 100Ω
R
L
= 50Ω
10M
100M
Frequency (Hz)
1G
Gain (dB)
Phase (°)
–20
–30
–40
–50
1M
Low I
Q
Phase (°)
Wide BW
R
S
= 0Ω
R
S
= 50Ω
R
S
= 100Ω
10M
100M
Frequency (Hz)
1G
–20
–30
–40
–50
1M
GAIN and PHASE vs FREQUENCY
vs LOAD CAPACITANCE
Low I
Q
Mode
R
L
= 100Ω
R
S
= 50Ω
V
O
= 10mV
10
5
0
–5
–10
0
–10
C
L
= 0pF
C
L
= 50pF
C
L
= 200pF
C
L
= 1nF
–15
0
–10
GAIN and PHASE vs FREQUENCY
vs LOAD CAPACITANCE
R
L
= 100Ω
R
S
= 50Ω
V
O
= 10mV
Wide BW Mode
10
5
0
–5
–10
–15
C
L
= 0
C
L
= 50pF
C
L
= 200pF
C
L
= 1nF
Gain (dB)
Phase (°)
–20
–30
–40
–50
1M
Phase (°)
–20
–30
–40
–50
10M
100M
Frequency (Hz)
1G
1M
10M
100M
Frequency (Hz)
1G
®
BUF634
4
Gain (dB)
Gain (dB)
Gain (dB)
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25°C, V
S
=
±15V,
unless otherwise noted.
GAIN and PHASE vs FREQUENCY
vs POWER SUPPLY VOLTAGE
R
L
= 100Ω
R
S
= 50Ω
V
O
= 10mV
Wide BW
Low I
Q
0
–10
10
POWER SUPPLY REJECTION vs FREQUENCY
100
Gain (dB)
5
0
–5
–10
–15
90
Power Supply Rejection (dB)
80
70
60
50
40
30
20
10
0
Low I
Q
Wide BW
Phase (°)
Wide BW
Low I
Q
–20
–30
–40
–50
1M
V
S
= ±18V
V
S
= ±12V
V
S
= ±5V
V
S
= ±2.25V
1G
10M
100M
Frequency (Hz)
1k
10k
100k
Frequency (Hz)
1M
10M
QUIESCENT CURRENT
vs BANDWIDTH CONTROL RESISTANCE
20
18
16
+15V
SHORT CIRCUIT CURRENT vs TEMPERATURE
500
450
BW
R
Quiescent Current (mA)
14
12
10
8
6
4
2
0
10
100
Resistance (Ω)
1k
1.5mA at R =
∞
–15V
Limit Current (mA)
15mA at R = 0
400
350
Low I
Q
Mode
300
250
200
Wide Bandwidth Mode
10k
–50
–25
0
25
50
75
100
125
150
Junction Temperature (°C)
QUIESCENT CURRENT vs TEMPERATURE
7
Cooling
6
Quiescent Current (mA)
QUIESCENT CURRENT vs TEMPERATURE
20
Quiescent Current (mA)
Low I
Q
Mode
5
4
≈10°C
3
2
1
Thermal Shutdown
0
–50 –25
0
25
50
75
100 125 150 175 200
Junction Temperature (°C)
15
Thermal Shutdown
10
Wide BW Mode
5
Cooling
0
–50
–25
0
25
50
75
100
125
150
175
200
Junction Temperature (°C)
≈10°C
®
5
BUF634
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