®
BUF460AV
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
s
EASY TO DRIVE TECHNOLOGY (ETD)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO(sus)
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
Max Operation Junction Temperature
Value
1000
450
7
80
160
18
27
270
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
February 2003
1/7
BUF460AV
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.41
0.05
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25 mH
V
clamp
= 450 V
I
C
= 60 A
I
C
I
C
I
C
I
C
=
=
=
=
30
30
60
60
A
A
A
A
V
CE
= 5 V
I
B
I
B
I
B
I
B
=
=
=
=
3A
o
3 A T
j
= 100 C
12 A
o
12 A T
j
= 100 C
T
j
= 100 C
150
4
2
4.5
0.1
0.3
400
6
3
5
0.2
5
o
Min.
Typ.
Max.
0.2
2
0.2
2
1
Unit
mA
mA
mA
mA
mA
V
T
j
= 100
o
C
T
j
= 100 C
o
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
h
FE
∗
V
CE(sat)
∗
DC Current Gain
Collector-Emitter
Saturation Voltage
450
15
0.35
2
0.5
2
1.1
1.5
V
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
V
BE(sat)
∗
di
C
/dt
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
I
C
= 60 A
I
C
= 60 A
V
CC
= 300 V
I
B1
= 18 A
V
CC
= 300 V
I
B1
= 18 A
V
CC
= 300 V
I
B1
= 18 A
I
B
= 12 A
I
B
= 12 A
R
C
= 0
t
p
= 3
µs
o
T
j
= 100 C
R
C
= 30
Ω
T
j
= 100
o
C
R
C
= 30
Ω
T
j
= 100
o
C
V
CE
(3
µs)•
Collector-Emitter
Dynamic Voltage
V
CE
(5
µs)•
Collector-Emitter
Dynamic Voltage
t
s
t
f
t
c
V
CEW
Storage Time
Fall Time
Cross-over Time
Maximum Collector
Emitter Voltage
Without Snubber
I
C
= 30 A
V
CC
= 50 V
R
BB
= 0.2
Ω
V
BB
= -5 V
V
clamp
= 400 V I
B1
= 3 A
L = 25
µH
T
j
= 100
o
C
I
CWoff
= 80 A
V
BB
= -5 V
L = 80
µH
T
j
= 125
o
C
I
B1
= 16 A
V
CC
= 50 V
R
BB
= 0.2
Ω
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
BUF460AV
Safe Operating Area
Thermal Impedance
Derating Curve
Collector-Emitter Voltage Versus
Base-Emitter Resistance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUF460AV
Reverse Biased SOA
Forward Biased SOA
Reverse Biased SOA
Forward Biased SOA
Switching Time Inductive Load
Switching Time Inductive Load Versus
Temperature
4/7
BUF460AV
DC Current Gain
Turn-off Switching Test Circuit
1) Fast electronic switch 2) Non-inductive
Resistor
Turn-on Switching Waveforms.
Turn-off Switching Test Circuit
Turn-off Switching Waveforms.
1) Fast electronic switch
3) Fast recovery rectifier
2) Non-inductive Resistor
5/7
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