UNISONIC TECHNOLOGIES CO., LTD
BU406
SILICON NPN SWITCHING
TRANSISTOR
DESCRIPTION
The UTC
BU406
is a NPN expitaxial planar transistor. It is a fast
switching device for use in horizontal deflection output stages of
large screens MTV receivers with 110℃ CRT.
NPN PLANAR TRANSISTOR
*Pb-free plating product number: BU406L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BU406-x-TA3-T
BU406L-x-TA3-T
BU406-x-TF3-T
BU406L-x-TF3-T
BU406-x-T3P-T
BU406L-x-T3P-T
Package
TO-220
TO-220F
TO-3P
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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BU406
ABSOLUTE MAXIMUM RATING
NPN PLANAR TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (I
E
=0)
V
CBO
400
V
Collector-Emitter Voltage (V
BE
=-1.5V)
V
CEV
400
V
Collector-Emitter Voltage (I
B
=0)
V
CEO
200
V
Emitter-Base Voltage (I
C
=0)
V
EBO
6
V
Collector Current
I
C
7
A
Collector Peak Current (repetitive)
I
CM
10
A
Collector Peak Current (tp=10ms)
I
CM
15
A
Base Current
I
B
4
A
Collector Dissipation (T
C
≤25℃)
P
C
60
W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
70
2.08
UNIT
℃/W
℃
/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collect Cutoff Current (V
BE
=0)
SYMBOL
I
CES
TEST CONDITIONS
V
CE
=400V
V
CE
=250V T
C
=150°C
V
CE
=250V
V
BE
=6V
I
C
=5A, I
B
=0.5A
I
C
=5A, I
B
=0.5A
V
CE
=10V, I
C
=500mA
I
C
=500mA, V
CE
=10V
I
C
=5A, I
B
=0.5A
V
CE
=40V, t=10ms
MIN
TYP
MAX
5
100
1
1
1
1.2
240
0.75
4
UNIT
mA
µA
mA
mA
V
V
MHz
µs
A
Emitter Cut-off Current (I
C
=0)
I
EBO
Collector-Emitter Saturation Voltage
V
CE(SAT)*
Base-Emitter Saturation Voltage
V
BE(SAT)*
DC Current Gain
h
FE
Transition Frequency
f
T
Turn-off Time
t
OFF
Second Breakdown Collector Current
Is/b
*
Pulse duration=300µs, duty cycle 1.5%
70
10
CLASSIFICATION OF h
FE
RANK
RANGE
A
70 ~ 120
B
110 ~ 240
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BU406
TYPICAL CHARACTERISTICS
NPN PLANAR TRANSISTOR
Saturation Voltage, V
CE(SAT)
(V), V
BE(SAT)
(V)
10000
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
I
C
= 10I
B
V
BE(SAT)
Capacitance, C
ob
(pF)
Collector Output Capacitance
1000
f = 1MHz
1000
100
100
V
CE(SAT)
10
10
0
1000
100
10
Collector Current, I
C
(mA)
10000
1
1
10
Collector-Base Voltage, V
CB
(V)
100
Safe Operating Area
80
70
10
I
C
Max. (Pulsed)
I
C
Max. (Continuous)
ss
Di
Power Derating
Power Dissipation, P
C
(W)
Collector Current, I
C
(A)
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
s
1m
ms
10
s
0m
ited
10
m
Li
n
io
at
ip
TO-220
1
0.1
1
10
100
Collector-Base Voltage, V
CE
(V)
V
CE
MAX.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
bL
S/
im
ite
d
Case Temperature, T
C
(°C)
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BU406
NPN PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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