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BTW68N800

Description
HIGH SURGE CAPABILITY
File Size65KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet View All

BTW68N800 Overview

HIGH SURGE CAPABILITY

BTW 68 (N)
SCR
.
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average
on-state
current
(180°
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
BTW 68
BTW 68 N
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
Tc=80°C
Tc=85°C
tp=8.3 ms
tp=10 ms
I2t
dI/dt
Tstg
Tj
Tl
tp=10 ms
Value
30
35
19
22
420
400
800
100
- 40 to + 150
- 40 to + 125
230
A2s
A/µs
°C
°C
°C
Unit
A
A
A
K
A
G
TOP 3
(Plastic)
Symbol
Parameter
BTW 68
200
400
400
BTW 68 / BTW 68 N
600
600
800
800
1000
1000
1200
1200
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
200
V
March 1995
1/5
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